SSM3J334R Silicon P-Channel MOSFET

Toshiba Semiconductor

Description

SSM3J334R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) SSM3J334R ○Power Management Switch Applications Unit: mm * L.

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Datasheet Specifications

Part number: SSM3J334R
Manufacturer: Toshiba ↗ Semiconductor
File Size: 465.63 KB
Datasheet: SSM3J334R-ToshibaSemiconductor.pdf
Description: Silicon P-Channel MOSFET

Applications

* Unit: mm
* Low ON-resistance: RDS(ON) = 71 mΩ (max) (@VGS = -10 V) RDS(ON) = 105 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 136 mΩ (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS -30 V Gate-Source voltage VGSS ± 20

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SSM3J334R Silicon P-Channel MOSFET Toshiba Semiconductor

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