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SSM3J334R Datasheet - Toshiba Semiconductor

SSM3J334R Silicon P-Channel MOSFET

SSM3J334R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) SSM3J334R ○Power Management Switch Applications Unit: mm Low ON-resistance: RDS(ON) = 71 mΩ (max) (@VGS = -10 V) RDS(ON) = 105 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 136 mΩ (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS -30 V Gate-Source voltage VGSS ± 20 V Drain current DC ID (Note 1) -4 A Pulse IDP (Note 1,2) -16 P.

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Datasheet Details

Part number:

SSM3J334R

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

465.63 KB

Description:

Silicon p-channel mosfet.

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