SSM3J352F - Silicon P-Channel MOSFET

Toshiba

Datasheet Details

(1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 443 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 199 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 136 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 110 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Assignment S-Mini SSM3J352F 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2015-12 2016-12-19 Rev.2.0 SSM3J352F 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol.

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Published: Jun 22, 2019 |