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SSM3J352F Datasheet - Toshiba

SSM3J352F Silicon P-Channel MOSFET

SSM3J352F Features

* (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 443 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 199 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 136 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 110 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Assignment S-Mini SSM3J352F 1: Gate 2: Source 3: Drain

SSM3J352F Datasheet (340.95 KB)

Preview of SSM3J352F PDF

Datasheet Details

Part number:

SSM3J352F

Manufacturer:

Toshiba ↗

File Size:

340.95 KB

Description:

Silicon p-channel mosfet.

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SSM3J352F Silicon P-Channel MOSFET Toshiba

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