SSM3J356R - Silicon P-Channel MOSFET

Toshiba

Datasheet Details

(1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4 V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 400 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 300 mΩ (max) (@VGS = -10 V) 3. Packaging and Internal Circuit SSM3J356R 1: Gate 2: Source 3: Drain SOT-23F 4. Orderable part number Orderable part number AEC-Q101 Note SSM3J356R,LF SSM3J356R,LXGF SSM3J356R,LXHF.
YES YES (Note 1) General Use Unintended Use Automotive Use Note 1: For more information, p.

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Published: May 20, 2019 |