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SSM3J356R Datasheet - Toshiba

SSM3J356R Silicon P-Channel MOSFET

SSM3J356R Features

* (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4 V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 400 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 300 mΩ (max) (@VGS = -10 V) 3. Packaging and Internal Circuit SSM3J356R 1: Gate 2: Source 3: Drain SOT-23F 4. Order

SSM3J356R Datasheet (325.60 KB)

Preview of SSM3J356R PDF

Datasheet Details

Part number:

SSM3J356R

Manufacturer:

Toshiba ↗

File Size:

325.60 KB

Description:

Silicon p-channel mosfet.

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SSM3J356R Silicon P-Channel MOSFET Toshiba

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