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SSM3J353F

Silicon P-Channel MOSFET

SSM3J353F Features

* (1) 4.0 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 274 mΩ (max) (@VGS = -4.0 V, ID = -0.5 A) RDS(ON) = 232 mΩ (max) (@VGS = -4.5 V, ID = -0.5 A) RDS(ON) = 150 mΩ (max) (@VGS = -10 V, ID = -2.0 A) 3. Packaging and Pin Assignment S-Mini SSM3J353F 1: Gate 2: Source 3: Drain

SSM3J353F Datasheet (359.75 KB)

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Datasheet Details

Part number:

SSM3J353F

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

359.75 KB

Description:

Silicon p-channel mosfet.

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SSM3J353F Silicon P-Channel MOSFET Toshiba Semiconductor

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