SSM3J353F Silicon P-Channel MOSFET

Toshiba Semiconductor

Description

MOSFETs Silicon P-Channel MOS (U-MOS) SSM3J353F 1.Applications * Power Management Switches 2..

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Datasheet Specifications

Part number: SSM3J353F
Manufacturer: Toshiba ↗ Semiconductor
File Size: 359.75 KB
Datasheet: SSM3J353F-ToshibaSemiconductor.pdf
Description: Silicon P-Channel MOSFET

Features

* (1) 4.0 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 274 mΩ (max) (@VGS = -4.0 V, ID = -0.5 A) RDS(ON) = 232 mΩ (max) (@VGS = -4.5 V, ID = -0.5 A) RDS(ON) = 150 mΩ (max) (@VGS = -10 V, ID = -2.0 A) 3. Packaging and Pin Assignment S-Mini SSM3J353F 1: Gate 2: Source 3: Drain

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SSM3J353F Silicon P-Channel MOSFET Toshiba Semiconductor

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