SSM3J353F - Silicon P-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	SSM3J353F
Manufacturer	Toshiba ↗ Semiconductor
File Size	359.75 KB
Description	Silicon P-Channel MOSFET
Datasheet	SSM3J353F-ToshibaSemiconductor.pdf

(1) 4.0 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 274 mΩ (max) (@VGS = -4.0 V, ID = -0.5 A) RDS(ON) = 232 mΩ (max) (@VGS = -4.5 V, ID = -0.5 A) RDS(ON) = 150 mΩ (max) (@VGS = -10 V, ID = -2.0 A) 3. Packaging and Pin Assignment S-Mini SSM3J353F 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-02 2016-12-19 Rev.2.0 SSM3J353F 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol.

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Published: Mar 21, 2018 |