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SSM3J306T Datasheet - Toshiba Semiconductor

SSM3J306T Silicon P-Channel MOSFET

SSM3J306T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J306T Power management switch Applications 4 V drive Low ON-resistance: Ron = 225 mΩ (max) (@VGS = 4 V) Ron = 117 mΩ (max) (@VGS = 10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain source voltage VDS 30 V Gate source voltage VGSS ± 20 V Drain current DC ID Pulse IDP 2.4 A 4.8 Dra.

SSM3J306T_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

SSM3J306T

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

197.70 KB

Description:

Silicon p-channel mosfet.

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SSM3J306T SSM3J306T Silicon P-Channel MOSFET Toshiba Semiconductor