SSM3J306T Silicon P-Channel MOSFET

Toshiba Semiconductor

Description

SSM3J306T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J306T Power management switch Applications * 4 V drive * Lo.

📥 Download Datasheet

SSM3J306T Datasheet Preview — Preview of SSM3J306T PDF

Datasheet Specifications

Part number: SSM3J306T
Manufacturer: Toshiba ↗ Semiconductor
File Size: 197.70 KB
Datasheet: SSM3J306T_ToshibaSemiconductor.pdf
Description: Silicon P-Channel MOSFET

Applications

* 4 V drive
* Low ON-resistance: Ron = 225 mΩ (max) (@VGS =
* 4 V) Ron = 117 mΩ (max) (@VGS =
* 10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain
* source voltage VDS
* 30 V Gate
* source voltage

SSM3J306T Distributors

📁 Related Datasheet

SSM3J326T SSM3J338R SSM3J340R SSM3J351R SSM3J352F SSM3J355R

📌 All Tags

SSM3J306T Silicon P-Channel MOSFET Toshiba Semiconductor

Toshiba Semiconductor SSM3J306T-like datasheet