SSM3J317T Datasheet - Toshiba Semiconductor

SSM3J317T Power Management Switch Applications High-Speed Switching Applications

SSM3J317T www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J317T ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.8-V drive Low ON-resistance: Ron = 306 mΩ (max) (@VGS = -1.8 V) : Ron = 144 mΩ (max) (@VGS = -2.8 V) : Ron = 107 mΩ (max) (@VGS = -4.5 V) 2.9±0.2 0.95 １２３ Unit: mm +0.2 2.8-0.3 +0.2 1.6-0.1 0.4±0.1 0.15 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Dr.

SSM3J317T Features

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SSM3J317T_ToshibaSemiconductor.pdf