SSM3J307T Silicon P-Channel MOSFET

Toshiba Semiconductor

Description

SSM3J307T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) SSM3J307T ○ Power Management Switch Applications ○ High-Speed Switchi.

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Datasheet Specifications

Part number: SSM3J307T
Manufacturer: Toshiba ↗ Semiconductor
File Size: 249.36 KB
Datasheet: SSM3J307T_ToshibaSemiconductor.pdf
Description: Silicon P-Channel MOSFET

Applications

* ○ High-Speed Switching Applications
* 1.5 V drive
* Low ON-resistance: Ron = 83 mΩ (max) (@VGS = -1.5 V) Ron = 56 mΩ (max) (@VGS = -1.8 V) Ron = 40 mΩ (max) (@VGS = -2.5 V) Ron = 31 mΩ (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25°C) 2.9±0.2 1.9±0.2 0.95 0.95 +0.2 2.8-0.3

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SSM3J307T Silicon P-Channel MOSFET Toshiba Semiconductor

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