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SSM3J307T Datasheet - Toshiba Semiconductor

SSM3J307T Silicon P-Channel MOSFET

SSM3J307T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) SSM3J307T ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.5 V drive Low ON-resistance: Ron = 83 mΩ (max) (@VGS = -1.5 V) Ron = 56 mΩ (max) (@VGS = -1.8 V) Ron = 40 mΩ (max) (@VGS = -2.5 V) Ron = 31 mΩ (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25°C) 2.9±0.2 1.9±0.2 0.95 0.95 +0.2 2.8-0.3 +0.2 1.6-0.1 Unit: mm 0.4±0.1 １ ２ ３ 0～0.1 0.15 0.16±0.05 Chara.

SSM3J307T_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

SSM3J307T

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

249.36 KB

Description:

Silicon p-channel mosfet.

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SSM3J307T SSM3J307T Silicon P-Channel MOSFET Toshiba Semiconductor