SSM3J325F Silicon P-Channel MOSFET

Toshiba Semiconductor

Description

SSM3J325F TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J325F ○ Power Management Switch Applications Unit: mm * 1.

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Datasheet Specifications

Part number: SSM3J325F
Manufacturer: Toshiba ↗ Semiconductor
File Size: 254.26 KB
Datasheet: SSM3J325F_ToshibaSemiconductor.pdf
Description: Silicon P-Channel MOSFET

Applications

* Unit: mm
* 1.5-V drive
* Low ON-resistance: RDS(ON) = 311 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 231 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 179 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 150 mΩ (max) (@VGS = -4.5 V) +0.5 2.5-0.3 +0.25 1.5-0.15 1 2 3 +0.1 0.4-0.05 2.9±0.2 1.9 0.95 0.95 Absol

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SSM3J325F Silicon P-Channel MOSFET Toshiba Semiconductor

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