SSM3J325F Datasheet (Toshiba Semiconductor)

SSM3J325F, Silicon P-Channel MOSFET

SSM3J325F TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J325F ○ Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: RDS(ON) = 311 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 231 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 179 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 150 mΩ (max) (@VGS = -4.5 V) +0.5 2.5-0.3 +0.25 1.5-0.15 1 2 3 +0.1 0.4-0.05 2.9±0.2 1.9 0.95 0.95 Absolute Maximum Ratings (Ta = 25°C) 0.3 +0.1 0.16-0.06 +0.2 1.1-0.1 Chara