SSM3J327R - Silicon P-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	SSM3J327R
Manufacturer	Toshiba ↗ Semiconductor
File Size	428.80 KB
Description	Silicon P-Channel MOSFET
Datasheet	SSM3J327R_ToshibaSemiconductor.pdf

(1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 123 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 93 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Internal Circuit SOT-23F SSM3J327R 1: Gate 2: Source 3: Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2009-12 2021-10-21 Rev.1.0 SSM3J327R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) C.

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Published: Sep 16, 2012 |