Datasheet Specifications
- Part number
- SSM3J327R
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 428.80 KB
- Datasheet
- SSM3J327R_ToshibaSemiconductor.pdf
- Description
- Silicon P-Channel MOSFET
Description
MOSFETs Silicon P-Channel MOS (U-MOS *) SSM3J327R 1.Applications * Power Management Switches 2..
Features
* (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 123 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 93 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Internal Circuit SOT-23F SSM3J327R 1: Gate 2: Source 3: Drain ©2021 1 TSSM3J327R Distributors
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