SSM3J327R Datasheet, Mosfet, Toshiba Semiconductor

SSM3J327R Features

• Mosfet (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 123 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 93 mΩ

PDF File Details

Part number:

SSM3J327R

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

428.80kb

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📄 Datasheet

Description:

Silicon p-channel mosfet.

SSM3J327R Application

• Applications
• Power Management Switches 2. Features (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 240 mΩ (max) (@VGS = -1.

TAGS

SSM3J327R

Toshiba Semiconductor

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