SSM3J327R Datasheet - Toshiba Semiconductor

SSM3J327R, Silicon P-Channel MOSFET

MOSFETs Silicon P-Channel MOS (U-MOS *) SSM3J327R 1.Applications * Power Management Switches 2..

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SSM3J327R_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

SSM3J327R

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

428.80 KB

Description:

Silicon P-Channel MOSFET

Features

* (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 123 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 93 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Internal Circuit SOT-23F SSM3J327R 1: Gate 2: Source 3: Drain ©2021 1 T

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SSM3J327R Silicon P-Channel MOSFET Toshiba Semiconductor

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