SSM3J328R Silicon P-Channel MOSFET

Toshiba Semiconductor

Description

MOSFETs Silicon P-Channel MOS (U-MOS *) SSM3J328R 1.Applications * Power Management Switches 2..

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Datasheet Specifications

Part number: SSM3J328R
Manufacturer: Toshiba ↗ Semiconductor
File Size: 416.37 KB
Datasheet: SSM3J328R_ToshibaSemiconductor.pdf
Description: Silicon P-Channel MOSFET

Features

* (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 88.4 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 29.8 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Internal Circuit SOT-23F SSM3J328R 1: Gate 2: Source 3: Drain ©2021-

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SSM3J328R Silicon P-Channel MOSFET Toshiba Semiconductor

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