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SSM3J327F Datasheet - Toshiba Semiconductor

SSM3J327F Silicon P-Channel MOSFET

SSM3J327F TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J327F ○ Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: RDS(ON) = 242 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 170 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 125 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 95 mΩ (max) (@VGS = -4.5 V) +0.5 2.5-0.3 +0.25 1.5-0.15 1 2 3 +0.1 0.4-0.05 2.9±0.2 1.9 0.95 0.95 Absolute Maximum Ratings (Ta = 25°C) 0.3 +0.1 0.16-0.06 +0.2 1.1-0.1 Charac.

SSM3J327F_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

SSM3J327F

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

226.96 KB

Description:

Silicon p-channel mosfet.

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SSM3J327F SSM3J327F Silicon P-Channel MOSFET Toshiba Semiconductor