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SSM3J355R Datasheet - Toshiba

SSM3J355R Silicon P-Channel MOSFET

SSM3J355R Features

* (1) 1.8 V drive (2) Low drain-source on-resistance : RDS(ON) = 36.0 mΩ (typ.) (VGS = -1.8 V) RDS(ON) = 28.0 mΩ (typ.) (VGS = -2.5 V) RDS(ON) = 23.0 mΩ (typ.) (VGS = -4.5 V) 3. Packaging and Internal Circuit SOT-23F SSM3J355R 1: Gate 2: Source 3: Drain ©2016-2025 1 Toshiba Electronic Devices & St

SSM3J355R Datasheet (436.92 KB)

Preview of SSM3J355R PDF

Datasheet Details

Part number:

SSM3J355R

Manufacturer:

Toshiba ↗

File Size:

436.92 KB

Description:

Silicon p-channel mosfet.

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SSM3J355R Silicon P-Channel MOSFET Toshiba

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