SSM3J355R - Silicon P-Channel MOSFET

Toshiba

Datasheet Details

(1) 1.8 V drive (2) Low drain-source on-resistance : RDS(ON) = 36.0 mΩ (typ. ) (VGS = -1.8 V) RDS(ON) = 28.0 mΩ (typ. ) (VGS = -2.5 V) RDS(ON) = 23.0 mΩ (typ. ) (VGS = -4.5 V) 3. Packaging and Internal Circuit SOT-23F SSM3J355R 1: Gate 2: Source 3: Drain ©2016-2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2016-11 2025-02-20 Rev.4.0 SSM3J355R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Characteristics Symbol Rating.

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Published: Jun 22, 2019 |