SSM3J355R Silicon P-Channel MOSFET

Toshiba

Description

MOSFETs Silicon P-Channel MOS SSM3J355R 1.Applications * Power Management Switches 2..

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Datasheet Specifications

Part number: SSM3J355R
Manufacturer: Toshiba ↗
File Size: 436.92 KB
Datasheet: SSM3J355R-Toshiba.pdf
Description: Silicon P-Channel MOSFET

Features

* (1) 1.8 V drive (2) Low drain-source on-resistance : RDS(ON) = 36.0 mΩ (typ. ) (VGS = -1.8 V) RDS(ON) = 28.0 mΩ (typ. ) (VGS = -2.5 V) RDS(ON) = 23.0 mΩ (typ. ) (VGS = -4.5 V) 3. Packaging and Internal Circuit SOT-23F SSM3J355R 1: Gate 2: Source 3: Drain ©2016-2025 1 Toshiba Electronic Devices & St

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SSM3J355R Silicon P-Channel MOSFET Toshiba

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