SSM3J305T Datasheet - Toshiba Semiconductor

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SSM3J305T Field-Effect Transistor Silicon P-Channel MOS Type

SSM3J305T www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J305T High-Speed Switching Applications * .

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Datasheet Details

Part number:

SSM3J305T

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

201.89 KB

Description:

Field-Effect Transistor Silicon P-Channel MOS Type

Features

* esult of noncompliance with applicable laws and regulations. 6 2007-11-01

Applications

* 4 V drive Low ON-resistance: Ron = 477 mΩ (max) (@VGS =
* 4 V) Ron = 237 mΩ (max) (@VGS =
* 10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain
* source voltage Gate
* source voltage Drain current Drain power dissipation Channel tem

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SSM3J305T Field-Effect Transistor Silicon P-Channel MOS Type Toshiba Semiconductor

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