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SSM3J305T Datasheet - Toshiba Semiconductor

SSM3J305T Field-Effect Transistor Silicon P-Channel MOS Type

SSM3J305T www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J305T High-Speed Switching Applications 4 V drive Low ON-resistance: Ron = 477 mΩ (max) (@VGS = 4 V) Ron = 237 mΩ (max) (@VGS = 10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain source voltage Gate source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID I.

SSM3J305T Features

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SSM3J305T Datasheet (201.89 KB)

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Datasheet Details

Part number:

SSM3J305T

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

201.89 KB

Description:

Field-effect transistor silicon p-channel mos type.

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SSM3J305T Field-Effect Transistor Silicon P-Channel MOS Type Toshiba Semiconductor

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