Datasheet4U Logo Datasheet4U.com

SSM3J305T Datasheet - Toshiba Semiconductor

SSM3J305T Field-Effect Transistor Silicon P-Channel MOS Type

SSM3J305T www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J305T High-Speed Switching Applications 4 V drive Low ON-resistance: Ron = 477 mΩ (max) (@VGS = 4 V) Ron = 237 mΩ (max) (@VGS = 10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain source voltage Gate source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID I.

SSM3J305T Features

* esult of noncompliance with applicable laws and regulations. 6 2007-11-01

SSM3J305T_ToshibaSemiconductor.pdf

Preview of SSM3J305T PDF
SSM3J305T Datasheet Preview Page 2 SSM3J305T Datasheet Preview Page 3

Datasheet Details

Part number:

SSM3J305T

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

201.89 KB

Description:

Field-effect transistor silicon p-channel mos type.

SSM3J305T Distributor

📁 Related Datasheet

SSM3J304T Silicon P-Channel MOSFET (Toshiba Semiconductor)

SSM3J306T Silicon P-Channel MOSFET (Toshiba Semiconductor)

SSM3J307T Silicon P-Channel MOSFET (Toshiba Semiconductor)

SSM3J317T Power Management Switch Applications High-Speed Switching Applications (Toshiba Semiconductor)

SSM3J321T Silicon P-Channel MOSFET (Toshiba Semiconductor)

SSM3J325F Silicon P-Channel MOSFET (Toshiba Semiconductor)

SSM3J326T Silicon P-Channel MOSFET (Toshiba)

SSM3J327F Silicon P-Channel MOSFET (Toshiba Semiconductor)

TAGS

SSM3J305T SSM3J305T Field-Effect Transistor Silicon P-Channel MOS Type Toshiba Semiconductor