SSM3J304T Datasheet (Toshiba Semiconductor)

SSM3J304T, Silicon P-Channel MOSFET

SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.8-V drive Low ON-resistance: RDS(ON) = 297 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 168 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 127 mΩ (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25˚C) Unit: mm Characteristic Symbol Rating Unit Drain-source voltage VDS -20 V Gate-source voltage VGSS ±8 V Drain current DC I