Datasheet4U Logo Datasheet4U.com

SSM3J304T Datasheet - Toshiba Semiconductor

SSM3J304T Silicon P-Channel MOSFET

SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.8-V drive Low ON-resistance: RDS(ON) = 297 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 168 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 127 mΩ (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25˚C) Unit: mm Characteristic Symbol Rating Unit Drain-source voltage VDS -20 V Gate-source voltage VGSS ±8 V Drain current DC I.

SSM3J304T_ToshibaSemiconductor.pdf

Preview of SSM3J304T PDF
SSM3J304T Datasheet Preview Page 2 SSM3J304T Datasheet Preview Page 3

Datasheet Details

Part number:

SSM3J304T

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

267.93 KB

Description:

Silicon p-channel mosfet.

SSM3J304T Distributor

📁 Related Datasheet

SSM3J305T Field-Effect Transistor Silicon P-Channel MOS Type (Toshiba Semiconductor)

SSM3J306T Silicon P-Channel MOSFET (Toshiba Semiconductor)

SSM3J307T Silicon P-Channel MOSFET (Toshiba Semiconductor)

SSM3J317T Power Management Switch Applications High-Speed Switching Applications (Toshiba Semiconductor)

SSM3J321T Silicon P-Channel MOSFET (Toshiba Semiconductor)

SSM3J325F Silicon P-Channel MOSFET (Toshiba Semiconductor)

SSM3J326T Silicon P-Channel MOSFET (Toshiba)

SSM3J327F Silicon P-Channel MOSFET (Toshiba Semiconductor)

TAGS

SSM3J304T SSM3J304T Silicon P-Channel MOSFET Toshiba Semiconductor