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SSM3J304T Silicon P-Channel MOSFET

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Description

SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T ○ Power Management Switch Applications ○ High-Speed Switching Applic.

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Applications

* ○ High-Speed Switching Applications
* 1.8-V drive
* Low ON-resistance: RDS(ON) = 297 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 168 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 127 mΩ (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25˚C) Unit: mm Characteristic Symbol Rating Unit Drain-sour

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Silicon P-Channel MOSFET Toshiba Semiconductor
Toshiba Semiconductor SSM3J304T-like datasheet