SSM3J304T Silicon P-Channel MOSFET

Toshiba Semiconductor

Description

SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T ○ Power Management Switch Applications ○ High-Speed Switching Applic.

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Datasheet Specifications

Part number: SSM3J304T
Manufacturer: Toshiba ↗ Semiconductor
File Size: 267.93 KB
Datasheet: SSM3J304T_ToshibaSemiconductor.pdf
Description: Silicon P-Channel MOSFET

Applications

* ○ High-Speed Switching Applications
* 1.8-V drive
* Low ON-resistance: RDS(ON) = 297 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 168 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 127 mΩ (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25˚C) Unit: mm Characteristic Symbol Rating Unit Drain-sour

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SSM3J304T Silicon P-Channel MOSFET Toshiba Semiconductor

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