SSM3J35AMFV - Silicon P-Channel MOSFET

Toshiba

Datasheet Details

(1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 3.2 Ω (typ. ) (@VGS = -1.2 V) RDS(ON) = 2.3 Ω (typ. ) (@VGS = -1.5 V) RDS(ON) = 2.0 Ω (typ. ) (@VGS = -1.8 V) RDS(ON) = 1.5 Ω (typ. ) (@VGS = -2.5 V) RDS(ON) = 1.1 Ω (typ. ) (@VGS = -4.5 V) 3. Packaging and Internal Circuit VESM SSM3J35AMFV 1: Gate 2: Source 3: Drain ©2017-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2017-03 2021-02-01 Rev.3.0 SSM3J35AMFV 4. Absolute Maximum Ratings (Note).

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Published: Jun 22, 2019 |