K10 Datasheet | Specifications & PDF Download

Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http:/

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SHENZHEN DONGKE SEMICONDUCTOR CO., LTD -DK106 HIGH PERFORMANCE SWITCH MODE POWER CONTROLLER SPECIFICATION 1. DESCRIPTION The DK106 is specially design

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Page1 of 3 RAE （） : . . . . . 2000 volts dV/dt KK1000 1200 - 2000 VDRM; 1000 A avg *********************************************************

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SV Series Special Medium Voltage Leaded Varistor Stackpole Electronics, Inc. Resistive Product Solutions Description The SV Series of transient volt

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K1010 Series cosmo  Description The K1010 series consist of an infrared emitting diode, optically coupled to a phototransistor detector. They are pac

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www.DataSheet4U.com DC COMPONENTS CO., LTD. R LCL65B TIRU LCL65N RFDTJGJFR SQFDJBMJSTS TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF2QIBSF SJMJDPO CRJEHF RFD

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TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications • Low drain-source ON-resistan

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PVG3.pdf 08/19 Trimmer Potentiometers SMD Sealed Type Single-Turn PVG3 Series Features 1. Surface Mount 3 mm Square / Single-turn / Cermet / Sealed

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Type TAS Solid Tantalum Capacitors Solid Tantalum Capacitors { Hermetically Sealed { High Capacitance { Low DC Leakage { Low Dissipation Factor { Te

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Type TAS Solid Tantalum Capacitors Solid Tantalum Capacitors { Hermetically Sealed { High Capacitance { Low DC Leakage { Low Dissipation Factor { Te

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Type TAS Solid Tantalum Capacitors Solid Tantalum Capacitors { Hermetically Sealed { High Capacitance { Low DC Leakage { Low Dissipation Factor { Te

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Type TAS Solid Tantalum Capacitors Solid Tantalum Capacitors { Hermetically Sealed { High Capacitance { Low DC Leakage { Low Dissipation Factor { Te

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PVG3.pdf 08/19 Trimmer Potentiometers SMD Sealed Type Single-Turn PVG3 Series Features 1. Surface Mount 3 mm Square / Single-turn / Cermet / Sealed

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MITSUBISHI Nch POWER MOSFET FK10UM-10 HIGH-SPEED SWITCHING USE FK10UM-10 OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 φ 3.6 3

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isc N-Channel MOSFET Transistor 2SK1014 DESCRIPTION ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Minimum Lot-to-Lot varia

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2SK1056, 2SK1057, 2SK1058 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Featu

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ALUMINUM ELECTROLYTIC CAPACITORS GU Snap-in Terminal Type, 105°C Standard series Withstanding 3000 hours application of rated ripple current at 105°C

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ZINC OXIDE VARISTOR Ancol FEATURES: l Widely voltage range 1 8v-1 .8kv l Fast response to the rapidly increase Voltage (Mu sec.) l Excellent non-lin

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