2SK117 TOSHIBA Field Effect Transistor Silicon N C.
Apm
2SK117 - Silicon N-Channel MOSFET
Apm JFET 2SK117 Low Noise Amplifier Applications Silicon N Channel Junction Type *High Yfs=15ms(typ)(VDS=10V,VGS=0) *High VGDS=--30V *Low noise:NF=1.
Toshiba Semiconductor
K117 - 2SK117
2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications • • • • High |Yfs|: |Yfs| = 15 m.
Toshiba Semiconductor
2SK117 - Silicon N-Channel MOSFET
2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications • • • • High |Yfs|: |Yfs| = 15 m.
Renesas
2SK1170 - Silicon N-Channel MOSFET
2SK1169, 2SK1170 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive curr.
Hitachi Semiconductor
2SK1170 - Silicon N-Channel MOSFET
2SK1169, 2SK1170 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv.
Hitachi Semiconductor
K1170 - 2SK1170
www.DataSheet4U.com 2SK1169, 2SK1170 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High spe.
KEC
KTK117 - N-Channel MOSFET
Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .
Sanken electric
2SK1177 - MOSFET
2SK1177 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS * Tch Tstg Ratings 500 ± 20 ± 2.5 ± 10 (Tch 150ºC) (Ta = 25ºC) External dimens.
Sanken electric
2SK1178 - MOSFET
2SK1178 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS * Tch Tstg Ratings 500 ± 20 ± 4.0 ± 16 (Tch 150ºC) (Ta = 25ºC) External dimens.
Alps
RK1171114-F15 - 11mm Size Metal Shaft Low-profile Potentiometer
11mm Size Metal Shaft Low-profile Potentiometer RK117 Series 3 types available: without switch, with 0.5mm travel or 1.5mm travel push-on switch. Rota.
Sanken electric
2SK1179 - MOSFET
2SK1179 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 500 ± 20 ± 8.5 ± 34 (Tch 150ºC) (Ta = 25ºC) External dimensio.
Samsung semiconductor
KSK117 - N-CHANNEL JUNCTION FET (LOW FREQUENCY LOW NOISE AMP.)
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Inchange Semiconductor
2SK1171 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=4A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Minimum Lot-to-Lot variations for .
NXP
BUK117-50DL - PowerMOS transistor Logic level TOPFET
Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic .
Inchange Semiconductor
2SK1172 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variations fo.
Alps
RK117 - 11mm Size Metal Shaft Low-profile Potentiometer
11mm Size Metal Shaft Low-profile Potentiometer RK117 Series 3 types available: without switch, with 0.5mm travel or 1.5mm travel push-on switch. Rota.