K180 Datasheet | Specifications & PDF Download

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RK1808 Datasheet Rev 1.4 Rockchip RK1808 Datasheet Revision 1.4 Dec. 2019 Copyright 2019 ©Fuzhou Rockchip Electronics Co., Ltd. 1 RK1808 Datashe

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MYG Varistors Data Sheet Features Ϡ Low leakage current,Excellent voltage ratio. Ϡ Fast respond to the rapidly rising surge voltage. Ϡ High performa

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Date:- 9th September, 2014 Data Sheet Issue:- 3 Wespack Phase Control Thyristor Types N1263JK160 to N1263JK180 Development Type No.: NX159JK160-180 A

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2SK1808 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fast Switching Speed ·Low on-resis

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MYG Varistors Data Sheet Features Ϡ Low leakage current,Excellent voltage ratio. Ϡ Fast respond to the rapidly rising surge voltage. Ϡ High performa

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MYG Varistors Data Sheet Features Ϡ Low leakage current,Excellent voltage ratio. Ϡ Fast respond to the rapidly rising surge voltage. Ϡ High performa

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Technische Information / Technical Information IGBT-Module IGBT-modules TDB6HK180N16RR EconoPACK™2 Modul EconoPACK™2 module Vorläufige Daten / Prel

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Power F-MOS FETs 2SK1803 Silicon N-Channel Power F-MOS FET s Features q Avalanche capacity guaranteed: EAS > 60mJ q VGSS = ±30V guaranteed q High-spee

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Advance Technical Information www.DataSheet4U.com PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFK 180N15P VDSS ID25 = 150 V = 180 A

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WESTCODE An IXYS Company Date:- 19 Jul, 2005 Data Sheet Issue:- 1
    Provisional Data Wespack Phase Control Thyristor Types N2593MK120 to

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTK180N15P VDSS = ID25 = RDS(on)  150V 180A 11m Symbol VDSS VDGR VGSS VGSM ID25

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HiperFETTM Power MOSFETs IXFK180N07 IXFX180N07 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier D G S Symbol VDSS VDGR VGSS VG

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Power F-MOS FETs 2SK1803 Silicon N-Channel Power F-MOS FET s Features q Avalanche capacity guaranteed: EAS > 60mJ q VGSS = ±30V guaranteed q High-spee

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2SK1807 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current

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