K180 Datasheet | Specifications & PDF Download

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fast Switching Speed ·Low on-resis

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HiperFETTM Power MOSFETs IXFK180N07 IXFX180N07 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier D G S Symbol VDSS VDGR VGSS VG

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Advance Technical Information www.DataSheet4U.com PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFK 180N15P VDSS ID25 = 150 V = 180 A

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTK180N15P VDSS = ID25 = RDS(on)  150V 180A 11m Symbol VDSS VDGR VGSS VGSM ID25

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Technische Information / Technical Information IGBT-Module IGBT-modules TDB6HK180N16RR EconoPACK™2 Modul EconoPACK™2 module Vorläufige Daten / Prel

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2SK1808 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current

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www.DataSheet4U.com HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD

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2SK1807 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot

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Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK180N25

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RK1808 Datasheet Rev 1.4 Rockchip RK1808 Datasheet Revision 1.4 Dec. 2019 Copyright 2019 ©Fuzhou Rockchip Electronics Co., Ltd. 1 RK1808 Datashe

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JIEJIE MICROELECTRONICS CO. , Ltd K0900G Series Sidac Rev.1.0 DESCRIPTION: The sidac is a silicon bilateral voltage triggered switch with greater p

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isc N-Channel MOSFET Transistor 2SK1807 DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Fast Switching Speed ·Min

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Power F-MOS FETs 2SK1803 Silicon N-Channel Power F-MOS FET s Features q Avalanche capacity guaranteed: EAS > 60mJ q VGSS = ±30V guaranteed q High-spee

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2SK1809 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current

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JIEJIE MICROELECTRONICS CO. , Ltd K0900S Series Sidac Rev.1.0 DESCRIPTION: The sidac is a silicon bilateral voltage triggered switch with greater p

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