| No |
Part Number |
Description |
Manufacture |
PDF |
| 4 |
K304 |
Silicon N Channel Junction FETs
Silicon N Channel Junction FETs
LH03 series of products interconvertible
2SK304
2SK304
D Symbol
Applications For charge sensor, meter amplifier circuit,
rheostat , chopper and gain controller for |
Kesailun Elctronic
|
|
| 3 |
K304 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)
Photocoupler
K301 • K302 • K304
These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Photo Darlington transistor per a channel. The K301 has one channel in |
KODENSHI KOREA CORP
|
|
| 2 |
K3047 |
2SK3047
Power F-MOS FETs
2SK3047
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 25ns q No secondary bre |
Panasonic Semiconductor
|
|
| 1 |
K3048 |
2SK3048
Power F-MOS FETs
2SK3048
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown
u |
Panasonic Semiconductor
|
|
