K3152 Datasheet | Specifications & PDF Download

2SK3152 Silicon N Channel MOS FET High Speed Power Switching ADE-208-732 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 100 mΩ ty

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2SK3152 Silicon N Channel MOS FET High Speed Power Switching ADE-208-732 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 100 mΩ ty

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2SK3152 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =100 mΩ typ. • High speed switching • 4 V gate drive dev

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isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 130mΩ@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot

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