K345 Datasheet | Specifications & PDF Download

www.DataSheet4U.com 2SK3451-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3455 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3455 is N-channel DMOS FET device that features

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3455 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3455 is N-channel DMOS FET device that features

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3454 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3454 is N-channel MOS FET device

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3454 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3454 is N-channel MOS FET device t

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3457 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3457 is N-channel DMOS FET device that features a

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www.DataSheet4U.com 2SK3453 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3453 Switching Regulator Applications · · · · Low

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isc N-Channel MOSFET Transistor 2SK345 FEATURES ·Drain Current : ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resis

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3458 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3458 is N-channel DMOS FET device that features

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2SK3450-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSF

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isc N-Channel MOSFET Transistor 2SK3450 FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Re

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SMD Type MOS Field Effect Transistor 2SK3458 TO-263 Features +0.1 1.27-0.1 MOSFET Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge QG = 25 nC T

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2SK3451-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MO

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2SK3451-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MO

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BetaTHERM Sensors Photo? 36K53A1 Configuration 2.794mm (0.110) Max.Dia. 76.2mm +/- 3.18mm (3.00 +/- 0.13 ) 69.85mm +/- 3.18mm (2.75 +/- 0.13 ) 63

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3457 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3457 is N-channel DMOS FET device that features

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www.DataSheet4U.com www.DataSheet4U.com

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2SK3450-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSF

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MCC R Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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