.
KEDA
89
KDF20N50A - N-channel MOSFET
N-channel MOSFET Features 500V,20A RDS(on)=0.21Ω @VGS=10V,ID=10A High speed switching High ruggedness 100% avalanche tested Improved dv/dt.
WEITRON
38
2N7002KDW - Dual N-Channel MOSFET
Dual N-Channel MOSFET P b Lead(Pb)-Free Features: * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ES.
KD
35
1N60 - SMALL SIGNAL SCHOTTKY DIODE
1N60 THRU 1N60P SMALL SIGNAL SCHOTTKY DIODE Reverse Voltage - 40 to 45 Volts Forward Current - 0.03 / 0.05 Ampere FEATURES ● Metal-on-silicon junctio.
Tesla Elektronicke Soucastky
35
KD607 - (KD6xx) AF Power Transistor
( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com .
FETek
33
FKD6115 - P-Channel MOSFET
FETek Technology Corp. Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell d.
AUO
32
T320XVN02.9-SKD - TFT LCD
T320XVN02.9 SKD Product Specification Rev 1.0 Model Name: T320XVN02.9 (SKD) Issue Date : 2013/2/06 ( ) Preliminary Specifications (※) Final Specifica.
Tesla
31
KD502 - AF Power Transistor NPN
w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .
STMicroelectronics
29
GP8NC60KD - short circuit rugged IGBT
STGB8NC60KD - STGD8NC60KD STGF8NC60KD - STGP8NC60KD 600 V - 8 A - short circuit rugged IGBT Features ■ Lower on voltage drop (VCE(sat)) ■ Lower CRES .
Yangzhou Yangjie
29
2N7002KDW - N-Channel Enhancement Mode Field Effect Transistor
2N7002KDW RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V) ＜2.5o.
KD
28
1.5SMCJ180CA - SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
1.5SMCJ5.0 THRU 1.5SMCJ440CA SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Stand - Off Voltage - 5.0 to 440 Volts Peak Pulse Power - 1500 Watt FEATURES .
KD
28
1.5SMCJ54CA - SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
1.5SMCJ5.0 THRU 1.5SMCJ440CA SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Stand - Off Voltage - 5.0 to 440 Volts Peak Pulse Power - 1500 Watt FEATURES .
KEC
27
KGT50N60KDA - NPT IGBT
SEMICONDUCTOR TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness..
STMicroelectronics
26
GF19NC60KD - 600V short-circuit rugged IGBT
STGB19NC60KD, STGF19NC60KD, STGP19NC60KD 20 A, 600 V short-circuit rugged IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no .
Tesla Elektronicke Soucastky
25
KD602 - (KD6xx) AF Power Transistor
( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com .
KD
25
SS220 - SCHOTTKY BARRIER RECTIFIER
SS215 THRU SS220 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 150 to 200 Volts Forward Current - 2.0 Ampere FEATURES ● The plastic package carries Un.
Chongqing
25
SKD502T - SkyMOS1 N-MOSFET
SKD502T, SKSS055N08N SkyMOS1 N-MOSFET 85V, 4.6mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Ex.
KEDA
23
KDG15N120H - IGBT
IGBT Features 1200V,15A VCE(sat)(typ.)=2.5V@VGE=15V,IC=15A High speed switching Higher system efficiency Soft current turn-off waveforms S.
NEC
22
EF2-12NUX - Ultra-low power/ compact and lightweight/ High breakdown voltage/ Surface mounting type
DATA S H E E T MINIATURE SIGNAL RELAY ED2/EF2 SERIES Ultra-low power, compact and lightweight, High breakdown voltage, Surface mounting type DESCRI.
Tesla Elektronicke Soucastky
22
KD605 - (KD6xx) AF Power Transistor
( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com .
FETek
21
FKD4115 - P-Channel MOSFET
FETek Technology Corp. Super Low Gate Charge 100% EAS Guaranteed Excellent CdV/dt effect decline Green Device Available Advanced high cell d.