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KSE Matched Datasheet



Part Number Description Manufacture
E13009L
KSE13009L / MJE13009L
aturation Voltage Cob Output Capacitance fT Current Gain Bandwidth Product tON Turn On Time tSTG Storage Time tF Fall Time * Pulse Test: Pulse Width£300ms, Duty Cycle£2% IC = 10mA, IB = 0 VEB = 7V, IC = 0 VCE = 5V, IC = 5A VCE = 5V, IC = 8A I
Manufacture
ETC
KSE340
NPN Epitaxial Silicon Transistor
E(sat)[V], SATURATION VOLTAGE VCE = 2V 1.2 IC = 10IB 1.0 hFE, DC CURRENT GAIN 100 0.8 V BE(sat) 0.6 V CE(sat) 0.4 10 0.2 1 1 10 100 1000 0.0 10 100 1000 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figu
Manufacture
Fairchild Semiconductor
13009L
KSE13009L
VCE = 10V, IC = 0.5A VCC =125V, IC = 8A IB1 = - IB2 = 1.6A RL = 15,6Ω 4 1.1 3 0.7 180 8 6 Min. 400 Typ. Max. 1 40 30 1 1.5 3 1.2 1.6 V V V V V pF MHz µs µs µs Units V mA VBE(sat) Cob fT tON tSTG tF Base-Emitter Saturation Voltage Output Capacitance
Manufacture
Fairchild Semiconductor
E13005
KSE13005
2A, IB = 0.5A IC = 4A, IB = 1A IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 2A IB1 = - IB2 = 0.4A RL = 62.5Ω 4 0.8 4 0.9 65 10 8 Min. 300 400 1 60 40 0.5 0.6 1 1.2 1.6 V V V V V pF MHz µs µs µs Ty
Manufacture
Fairchild Semiconductor
KSE350
PNP Transistor
Gain CONDITIONS VCB= -300V; IE= 0 VEB= -3V; IC= 0 IC=- 50mA; VCE= -10V KSE350 MIN TYP. MAX UNIT -100 μA -100 μA 30 240 Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The i
Manufacture
INCHANGE
24LC01
CMOS Serial EEPROM






• Operating voltage: 2.4V~5.5V Low power consumption
  – Operation: 5mA max.
  – Standby: 5µA max. Internal organization
  – 1K (HT24LC01):128×8
  – 2K (HT24LC02): 256×8 2-wire serial interface Write cycle time: 5ms max. Automatic erase-before-w
Manufacture
HoltekSemiconductorInc
KSE5020
NPN Silicon Transistor

• High Voltage, High Quality High Speed Switching : tF=0.1µs
• WIDE SOA 1 TO-126 2.Collector 3.Base 1. Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Col
Manufacture
Fairchild Semiconductor
KSE13007
NPN Silicon Transistor
= 2A IC = 2A, IB = 0.4A IC = 5A, IB = 1A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 5A IB1 = -IB2 = 1A RL = 50Ω 4 1.6 3 0.7 110 8 5 Min. 300 400 1 60 30 1 2 3 1.2 1.6 V V V V V pF MHz µs µs µs Typ. Max. Units V V mA IEBO hFE VCE(sa
Manufacture
Fairchild Semiconductor
KSE45H11
Silicon PNP Power Transistor
own Voltage VCE(sat) VBE(sat) ICEO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain *:Pulse test PW≤300us,duty cycle≤2% CON
Manufacture
INCHANGE
ULC0524P
Transient Voltage Suppressors
Solid-state silicon-avalanche technology Low operating and clamping voltage Up to four I/O Lines of Protection Ultra low capacitance: 0.35pF typical(I/O to I/O) Low Leakage Low operating voltage:5V Flow-Through design IEC COMPATIBILITY (EN61000-4) IE
Manufacture
msksemi

Total 134 results






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