| No |
Part Number |
Description |
Manufacture |
PDF |
| 46 |
KTB1124 |
PNP Silicon Epitaxial Planar Transistor
PNP Silicon Epitaxial Planar Transistor
FEATURES
Pb
Adoption of MBIT processes.
Lead-free
Low collector-to-emitter saturation voltage.
Fast switching speed.
Complementary: KTD16 |
GME
|
|
| 45 |
KTB1124 |
Silicon PNP transistor
KTB1124
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-89 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-89 Plastic Package.
特征 / Features
选用 MBIT 工艺规 |
BLUE ROCKET ELECTRONICS
|
|
| 44 |
KTB1124 |
EPITAXIAL PLANAR PNP TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed |
KEC
|
|
| 43 |
KTB1151 |
EPITAXIAL PLANAR PNP TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
FEATURES High Power Dissipation : PC=1.5W(Ta=25 Complementary to KTD1691.
)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYM |
KEC
|
|
| 42 |
KTB1234T |
EPITAXIAL PLANAR PNP TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
DRIVER APPLICATIONS. FEATURES ᴌAF amplifier, solenoid drivers, LED drivers. ᴌDarlington connection. ᴌHigh DC current gain. ᴌVery small-sized package permitting set |
KEC
|
|
| 41 |
KTB1241 |
EPITAXIAL PLANAR PNP TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURE ᴌHigh Breakdown Voltage and High Current
: VCEO=-80V, IC=-1A. ᴌLow VCE(sat) ᴌComplementary to KTD1863.
MAXIMUM RATING (Ta=25 |
KEC
|
|
| 40 |
KTB1260 |
EPITAXIAL PLANAR PNP TRANSISTOR
J B
EQ
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES 1W (Mounted on Ceramic Substrate). Small Flat Package. Complementary to KTD1898.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SY |
KEC
|
|
| 39 |
KTB1366 |
Silicon PNP transistor
KTB1366
Rev.F Mar.-2016
DATA SHEET
描述 / Descriptions TO-220F 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-220F Plastic Package.
特征 / Features
饱和压降低， |
BLUE ROCKET ELECTRONICS
|
|
| 38 |
KTB1366 |
PNP Transistor
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
KTB1366 TRANSISTOR (PNP)
FEATURES z Low Collector Saturation Voltage z Complementary to KTD2058
TO-220-3L |
JCET
|
|
| 37 |
KTB1366 |
PNP Transistor
RoHS KTB1366
TO-220F
KTB1366 TRANSISTOR (PNP)
DFEATURES Power dissipation
TPCM:
2 W (Tamb=25℃)
.,LCollector current
ICM: -3 Collector-base voltage
A
OV(BR)CBO:
-60 V
Operating and storage |
WEJ
|
|
| 36 |
KTB1366 |
Silicon PNP Power Transistors
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
KTB1366
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Collector Power Dissipation-
: PC |
Inchange Semiconductor
|
|
| 35 |
KTB1366 |
TRIPLE DIFFUSED PNP TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
KTB1366
TRIPLE DIFFUSED PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. Collector Power |
KEC
|
|
