KTB Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification KTB2955 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)C

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SEMICONDUCTOR TECHNICAL DATA KTB1370 TRIPLE DIFFUSED PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES High

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SEMICONDUCTOR TECHNICAL DATA VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT FEATURES Adoption of MBIT processes. Low collector-t

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PNP Epitaxial Planar Silicon Transistors FEATURES z Good Linearity of hfe. z Complementary to KTD2060 Pb Lead-free Production specification KTB1368

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PNP Silicon Epitaxial Planar Transistor FEATURES Pb  Adoption of MBIT processes. Lead-free  Low collector-to-emitter saturation voltage.  Fas

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SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Complementary to KTD1047B. Recommended for 60W Audio Frequency Amplifier Outpu

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SEMICONDUCTOR TECHNICAL DATA KTB1366 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Low Collector Saturation Voltage : VCE(sat

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURE ᴌHigh Breakdown Voltage and High Current : VCEO=-80V, IC=-1A. ᴌLow VCE(sat) ᴌComplem

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type

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SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION TV, MONITOR VERTICAL OUTPUT APPLICATION DRIVER STAGE APPLICATION COROR TV CLASS B SOUND OUTPUT A

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Ceramic Capacitors (Safety Regulation SMD) www.DataSheet4U.com Ceramic Capacitors (Safety Regulations) For Surface Mounting Types BC and FC ● Resin

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SEMICONDUCTOR TECHNICAL DATA AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING FEATURES ᴌComplementary to KTD1882. MAXIMUM RATING (Ta=25ᴱ) CHARACT

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SEMICONDUCTOR TECHNICAL DATA KTB2234 EPITAXIAL PLANAR PNP TRANSISTOR MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. POWER SWITCHING APPLICATIONS. POW

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SEMICONDUCTOR TECHNICAL DATA KTB1424 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. FEATURES High DC Current Gain : hFE=3000

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SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES ᴌComplementary to KTD3055. ᴌRecommended for 30Wᴕ35W Audio Frequency Amplifier

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES ᴌHigh Breakdown Voltage : VCEO=-100V. ᴌLow Collector-Emitter Saturation Voltage. :

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SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY POWER AMP, CONVERTER ELECTRONIC GOVERNOR APPLICATIONS FEATURES ᴌLow Saturation Voltage : VCE(sat)=-0.3V(Max

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KTB1124 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP 。Silicon PNP transistor in a SOT-89 Plastic Package.  / Features MBIT ，-,，, K

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SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Complementary to KTD998. Recommended for 45 50W Audio Frequency Amplifier Outp

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