KTB Datasheet | Specifications & PDF Download

PNP Epitaxial Planar Silicon Transistors FEATURES z Good Linearity of hfe. z Complementary to KTD2060 Pb Lead-free Production specification KTB1368

(1 views)

KTB1368 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220F PNP 。Silicon PNP transistor in a TO-220F Plastic Package.  / Features hFE , KTD2060

(1 views)

KTB1366 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220F PNP 。Silicon PNP transistor in a TO-220F Plastic Package.  / Features ， KTD2058 。 L

(1 views)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors KTB1366 TRANSISTOR (PNP) FEATURES z Low Collector Satura

(1 views)

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES ᴌGood Linearity of hFE. ᴌComplementary to KTD1352. MAXIMUM RATING (Ta=25ᴱ) CHARACT

(1 views)

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type

(1 views)

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type

(1 views)

SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES ᴌComplementary to KTD3055. ᴌRecommended for 30Wᴕ35W Audio Frequency Amplifier

(1 views)

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification KTB2955 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)C

(1 views)

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Collector Power Dissipation- : PC= 30W@ TC

(1 views)

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC

(1 views)

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Collector Power Dissipation- : PC= 25W@ TC=

(1 views)

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·Low Collector Saturation Voltage- : V

(1 views)

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification KTB2510 DESCRIPTION ·Collector-Emitter Breakdown Voltag

(1 views)

SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION TV, MONITOR VERTICAL OUTPUT APPLICATION DRIVER STAGE APPLICATION COROR TV CLASS B SOUND OUTPUT A

(1 views)

SEMICONDUCTOR TECHNICAL DATA AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING FEATURES ᴌComplementary to KTD1882. MAXIMUM RATING (Ta=25ᴱ) CHARACT

(1 views)

SEMICONDUCTOR TECHNICAL DATA KTB2234 EPITAXIAL PLANAR PNP TRANSISTOR MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. POWER SWITCHING APPLICATIONS. POW

(1 views)

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES ᴌHigh Breakdown Voltage : VCEO=-100V. ᴌLow Collector-Emitter Saturation Voltage. :

(1 views)

SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY POWER AMP, CONVERTER ELECTRONIC GOVERNOR APPLICATIONS FEATURES ᴌLow Saturation Voltage : VCE(sat)=-0.3V(Max

(1 views)

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES ᴌLow Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-3A, IB=-0.3A. ᴌColl

(1 views)