KTC4377 Datasheet | Specifications & PDF Download

RoHS KTC4377 KTC4377 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 0.5 W (Tamb=25℃) .,LCollector current ICM: 2 Collector-base voltage A O

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KTC4377 TRANSISTOR (NPN) FEATURES Low voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-

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SMD Type Transistors Epitaxial Planar NPN Transistor KTC4377 ■ Features ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A SOT-89 4

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SMD Type Transistors Diodes IC Transistor T Product specification KTC4377 SOT-89 Unit:mm 1.50 ±0.1 ■ Features ● Collector Power Dissipation: PC=5

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KTC4377 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features: * Low saturation voltage, VCE(sat) ≤0.5V@2

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Production specification NPN Silicon Epitaxial Planar Transistor FEATURES Pb  High DC Current Gain and Excellent hFE Linearity Lead-free : hFE(1

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REPLACEMENT TYPE : KTC4377 FEATURES  Low Voltage HETC4377 (NPN) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Para

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SEMICONDUCTOR TECHNICAL DATA KTC4377 EPITAXIAL PLANAR NPN TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES High DC Current Ga

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