KTD1304 Datasheet | Specifications & PDF Download

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BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES z z z High emitter-base voltage. High reverse hFE. Low on resistance. Productio

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NPN Silicon Epitaxial Planar Transistor FEATURES z High emitter-base voltage. z High reverse hFE. z Low on resistance. Pb Lead-free APPLICATIONS z

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KTD31 04 TRANSISTOR (NPN) SOT-23 FEATURES ·High emitter-base voltage ·low on resistance MARKING: MAX 1. BASE 2. EMITTER 3.COLLECTOR MAXIMUM RATIN

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SMD Type NPN Transistors KTD1304 (KTD1304S) Transistors ■ Features ● High Emitter-Base Voltage :VEBO = 12V(Min) ● High Reverse hFE ● Low on Resista

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Plastic-Encapsulate Transistors FEATURES • High emitter-base voltage • low on resistance Marking: MAX Maximum Ratings (Ta=25 Parameter Collector-Bas

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Elektronische Bauelemente KTD1304 0.3 A, 25 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead

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SEMICONDUCTOR TECHNICAL DATA AUDIO MUTING APPLICATION. FEATURES High Emitter-Base Voltage : VEBO=12V(Min.). High Reverse hFE : Reverse hFE=20(Min.) (V

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NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free KTD1304 1 2 3 SOT-23 ABSOLUTE MAXIMUM RATINGS(Ta Rating Collector-Base Voltage Collector-Emitte

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SMD Type NPN Transistors KTD1304 (KTD1304S) Transistors ■ Features ● High Emitter-Base Voltage :VEBO = 12V(Min) ● High Reverse hFE ● Low on Resista

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