LD-201 Datasheet | Specifications & PDF Download

Preliminary Datasheet LP2201 300mA, Dual Channel Ultra-Fast CMOS LDO Regulato General Description The LP2201 is a dual channel, low noise, and low d

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THD SERIES THD

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FYP2010DN — Schottky Barrier Rectifier FYP2010DN Schottky Barrier Rectifier Features • Low forward voltage drop • High frequency properties and switc

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Dual P-CHANNEL POWER MOSFET FEATURES Lower RDS(ON) Improved Inductive Ruggedness Fast Switching Times Low Input Capacitance Extended Safe Op

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www.DataSheet4U.com AT1201 Preliminary Product Information 2.5/2.7/2.8/3.0/3.3/4.5/5.0V 150mA LDO Features • Output voltage 2.5/2.7/2.8/3.0/3.3/4.5/5

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R1112N SERIES LOW NOISE 150mA LDO REGULATOR NO.EA-059-130409 OUTLINE The R1112N Series are CMOS-based voltage regulator ICs with high output voltag

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Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 1, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode L

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2016 2016 N-Channel Enhancement Mode Field Effect Transistor General Description The 2016 uses ad

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FYP2010DN — Schottky Barrier Rectifier FYP2010DN Schottky Barrier Rectifier Features • Low forward voltage drop • High frequency properties and switc

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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KSA1201 KSA1201 Power Amplifier • • • • Collector-Emitter Voltage: VCEO= -120V fT=120MHz Collector Power Dissipation PC=1~2W : Mounted on Ceramic Boa

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www.fairchildsemi.com TMC2011A/2111A Variable-Length Shift Register Features • Low power CMOS • TMC2011A is a pin compatible replacement for the TDC

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Molding Power Inductors – HEI Series HEI Series Features  RoHS, Halogen Free and REACH Compliance  High Efficiency  Excellent Q, RDC and saturatio

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R1122N SERIES LOW NOISE 150mA LDO REGULATOR NO.EA-060-111027 OUTLINE The R1122N Series are CMOS-based voltage regulator ICs with high output voltag

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PHOTOTRANSISTOR OPTOCOUPLERS MCT2 MCT2200 MCT2E MCT2201 MCT210 MCT2202 MCT271 WHITE PACKAGE (-M SUFFIX) BLACK PACKAGE (NO -M SUFFIX) 6 6 1 1 6 1

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MMBD1201 / 1203 / 1204 / 1205 Discrete POWER & Signal Technologies MMBD1201 / 1203 / 1204 / 1205 CONNECTION DIAGRAMS 3 1201 3 3 1203 3 24 1 2

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M Features • • • • • • • • • • • TC2014/2015/2185 General Description The TC2014, TC2015 and TC2185 are high-accuracy (typically ±0.4%) CMOS upgrades

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BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev. 01 — 28 October 2009 Objective data sheet 1. Product

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Customer Specific Device from ON Semiconductor Advance Information Single Ended PWM Controller Featuring QR Operation and Soft Frequency Foldback Feat

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Document 1100-1 Current Sense Transformers CST2010 • AEC-Q200 Grade 1 qualified (–40°C to +125°C ambient) • Sensed current up to 40 A; Frequency ra

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