LP2201 (Lowpowersemi)
Dual Channel Ultra-Fast CMOS LDO Regulator
Preliminary Datasheet LP2201
300mA, Dual Channel Ultra-Fast CMOS LDO Regulato
General Description
The LP2201 is a dual channel, low noise, and low d
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THD-1201L (SUN HOLD)
PCB Relay
THD SERIES
THD
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Y2010DN (Fairchild Semiconductor)
Schottky Barrier Rectifier
FYP2010DN — Schottky Barrier Rectifier
FYP2010DN Schottky Barrier Rectifier
Features
• Low forward voltage drop • High frequency properties and switc
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SSD2011A (Fairchild Semiconductor)
Dual P-CHANNEL POWER MOSFET
Dual P-CHANNEL POWER MOSFET
FEATURES
Lower RDS(ON) Improved Inductive Ruggedness Fast Switching Times Low Input Capacitance Extended Safe Op
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2016 (Tuofeng Semiconductor)
N-Channel Enhancement Mode Field Effect Transistor
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2016
2016
N-Channel Enhancement Mode Field Effect Transistor
General Description
The 2016 uses ad
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AT1201 (Aimtron Technology)
LDO
www.DataSheet4U.com
AT1201
Preliminary Product Information 2.5/2.7/2.8/3.0/3.3/4.5/5.0V 150mA LDO Features
• Output voltage 2.5/2.7/2.8/3.0/3.3/4.5/5
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MRF6V2010NBR1 (Freescale Semiconductor)
RF Power Field Effect Transistor
Freescale Semiconductor Technical Data
Document Number: MRF6V2010N Rev. 1, 5/2007
RF Power Field Effect Transistor
N - Channel Enhancement - Mode L
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MRF6V2010NR1 (Freescale Semiconductor)
RF Power Field Effect Transistor
Freescale Semiconductor Technical Data
Document Number: MRF6V2010N Rev. 1, 5/2007
RF Power Field Effect Transistor
N - Channel Enhancement - Mode L
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F2013 (Polyfet RF Devices)
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military
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XPL2010 (Coilcraft)
Shielded Power Inductors
Web page
Sample & buy
Tools & software
Support & FAQ
Document 646-1
Shielded Power Inductors XPL2010
• Ultra-miniature, magnetically shielded p
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TC2015 (Microchip Technology)
CMOS LDOs
M
Features
• • • • • • • • • • •
TC2014/2015/2185
General Description
The TC2014, TC2015 and TC2185 are high-accuracy (typically ±0.4%) CMOS upgrades
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TY72011AP2 (ON Semiconductor)
Single Ended PWM Controller Featuring QR Operation and Soft Frequency Foldback
Customer Specific Device from ON Semiconductor Advance Information Single Ended PWM Controller Featuring QR Operation and Soft Frequency Foldback
Feat
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KSA1201 (Fairchild Semiconductor)
Power Amplifier
KSA1201
KSA1201
Power Amplifier
• • • • Collector-Emitter Voltage: VCEO= -120V fT=120MHz Collector Power Dissipation PC=1~2W : Mounted on Ceramic Boa
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R1112N201B (RICOH)
LOW NOISE 150mA LDO REGULATOR
R1112N SERIES
LOW NOISE 150mA LDO REGULATOR
NO.EA-059-130409
OUTLINE
The R1112N Series are CMOS-based voltage regulator ICs with high output voltag
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11 views
TC2014 (Microchip Technology)
CMOS LDOs
M
Features
• • • • • • • • • • •
TC2014/2015/2185
General Description
The TC2014, TC2015 and TC2185 are high-accuracy (typically ±0.4%) CMOS upgrades
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SMD2016 (Littelfuse)
These devices offer a wide range of hold currents
POLYFUSE® RESETTABLE FUSES
SMD2016
SMD Type, 6 V - 60 V
Standard
UL 1434 1st Edition CSA C22.2 No. 0 CSA TIL No. CA-3A cULus Recognition TÜV
Specifi
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2010DN (Fairchild Semiconductor)
FYP2010DN
www.DataSheet4U.com
FYP2010DN
FYP2010DN
Features
• Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-vo
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R1114Q201A (RICOH)
LOW NOISE 150mA LDO REGULATOR
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RP201K (Nisshinbo)
3-MODE 150mA LDO REGULATOR
RP201Q (SC-88A) and RP201N (SOT-23-5) and RP201Z (WLCSP-4-P5) are the discontinued products as of February 2021.
RP201x SERIES
3-MODE 150mA LDO REGUL
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FU-68SDF-V802M201B (Mitsubishi Electric Semiconductor)
DFB-LD MODULE
MITSUBISHI (OPTICAL DEVICES)
TENTATIVE
FU-68SDF-V802MxxxB
1.58 µm (L-Band) DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED, BIAS C
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