LD-201 Series LED displays Flat displays LD-201 S.
Lowpowersemi
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LP2201 - Dual Channel Ultra-Fast CMOS LDO Regulator
Preliminary Datasheet LP2201 300mA, Dual Channel Ultra-Fast CMOS LDO Regulato General Description The LP2201 is a dual channel, low noise, and low d.
Fairchild Semiconductor
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Y2010DN - Schottky Barrier Rectifier
FYP2010DN — Schottky Barrier Rectifier FYP2010DN Schottky Barrier Rectifier Features • Low forward voltage drop • High frequency properties and switc.
Tuofeng Semiconductor
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2016 - N-Channel Enhancement Mode Field Effect Transistor
Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2016 2016 N-Channel Enhancement Mode Field Effect Transistor General Description The 2016 uses ad.
Fairchild Semiconductor
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2010DN - FYP2010DN
www.DataSheet4U.com FYP2010DN FYP2010DN Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-vo.
Polyfet RF Devices
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F2012 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
Fairchild Semiconductor
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J201 - N-Channel Amplifier
J201 - J202 / MMBFJ201 - MMBFJ203 — N-Channel General Purpose Amplifier J201 - J202 / MMBFJ201 - MMBFJ203 N-Channel General Purpose Amplifier Januar.
Silikron Semiconductor
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SSPL2015 - N-Channel enhancement mode power field effect transistors
Main Product Characteristics: VDSS 200V RDS(on) 0.13ohm(typ.) ID 18A ① Features and Benefits: Advanced Process Technology Special designed fo.
Chilisin
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HEI201610A-2R2M-Q8 - Molding Power Inductors
Molding Power Inductors – HEI Series HEI Series Power inductor takes an important part in the efficiency performance of DC/DC converter, and HEI prod.
Texas Instruments
9
TPS76201-Q1 - Ultralow-Power 100-mA LDO Linear Regulator
TPS76201-Q1 www.ti.com SLVSAO7 – DECEMBER 2010 Low Output, Adjustable, Ultralow-Power, 100-mA Low-Dropout Linear Regulator Check for Samples: TPS762.
Toshiba Semiconductor
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2SK2013 - Silicon N Channel MOS Type Field Effect Transistor
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 2SK2013 Audio Frequency Power Amplifier Application z High breakdown voltage z H.
Fairchild Semiconductor
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FCM8201 - 3-Phase Sinusoidal Brushless DC Motor Controller
FCM8201 — 3-Phase Sinusoidal Brushless DC Motor Controller September 2010 FCM8201 3-Phase Sinusoidal Brushless DC Motor Controller Features .
Meisongbei
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MW252018 - Surface-Mount Molded Wound Chip Inductors
Surface-Mount Molded Wound Chip Inductors Meisongbei Features ● Monolithic inorganic material construction ● Closed magnetic circuit avoids crosstal.
Fairchild
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MCT5201 - LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS
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Silikron Semiconductor
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SSPL2015D - N-Channel enhancement mode power field effect transistors
Main Product Characteristics VDSS RDS(on) 200V 0.13Ω(typ.) ID 18A ① Features and Benefits TO-252 Advanced Process Technology Special designe.
nexperia
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PMEG2010BELD - MEGA Schottky barrier rectifier
PMEG2010BELD 20 V, 1 A low VF MEGA Schottky barrier rectifier 4 August 2015 Product data sheet 1. General description Planar Maximum Efficiency Ge.
Mitsubishi Electric Semiconductor
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FU-68PDF-V520M201B - DFB-LD MODULE
MITSUBISHI (OPTICAL DEVICES) FU-68PDF-V520MxxxB 1.58 µm (L-Band) DFB-LD MODULE WITH POLARIZATION MAINTAINING FIBER PIGTAIL (WAVELENGTH SELECTED, BIAS.
Polyfet RF Devices
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F2013 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
Fairchild
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UA201 - GENERAL PURPOSE OPERATIONAL AMPLIFIERS
...AIOl· ...A201 GENERAL PURPOSE OPERATIONAL AMPLIFIERS FAIRCHILD LINEAR INTEGRATED CIRCUITS GENERAL DESCRIPTION - The ,..Al0l and ,..A201 are Genera.
