LD-60F Datasheet | Specifications & PDF Download

Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog

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Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation

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Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel

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Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog

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Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog

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Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance,

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FNC42060F / FNC42060F2 Motion SPM® 45 Series FNC42060F / FNC42060F2 Motion SPM® 45 Series January 2014 Features • UL Certified No. E209204 (UL1557)

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FSBB30CH60F Smart Power Module (For Hisense Only) April 12, 2006 FSBB30CH60F Smart Power Module Features • UL Certified No.E209204(SPM27-EA package)

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FCP11N60F/FCPF11N60F 600V N-Channel MOSFET SuperFET FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.32Ω • F

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SEMICONDUCTOR TECHNICAL DATA KF2N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF2N60P This planar stripe MOSFET has better char

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance,

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FCH47N60F 600V N-Channel MOSFET May 2006 SuperFET FCH47N60F 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.062Ω • Fast Recover

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FCA47N60F 600V N-Channel MOSFET, FRFET SuperFET FCA47N60F 600V N-Channel MOSFET, FRFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.062Ω • Fast Rec

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FSBB20CH60F Motion SPM® 3 Series FSBB20CH60F Motion SPM® 3 Series January 2014 Features • UL Certified No. E209204 (UL1557) • 600 V - 20 A 3-Phase

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FSBS15CH60F Motion SPM® 3 Series FSBS15CH60F Motion SPM® 3 Series January 2014 Features • UL Certified No. E209204 (UL1557) • 600 V - 15 A 3-Phase

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FGH80N60FD2 600V, 80A Field Stop IGBT April 2008 FGH80N60FD2 600V, 80A Field Stop IGBT Features • High current capability • Low saturation voltage:

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FCH041N60F — N-Channel SuperFET® II FRFET® MOSFET FCH041N60F N-Channel SuperFET® II FRFET® MOSFET 600 V, 76 A, 41 mΩ December 2014 Features • 650 V

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