LEM Datasheet | Specifications & PDF Download

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SD Series • High Efficiency Storage Chokes SD Series storage chokes provide excellent efficiency and field modulation when used as loading coils for

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4H11G(NPN) 5H11G(PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and swi

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SEMICONDUCTOR TIP31 (NPN) Series TIP32 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 3A/40~100V/40W FEATURES

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SD Series • High Efficiency Storage Chokes SD Series storage chokes provide excellent efficiency and field modulation when used as loading coils for

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Shenzhen Tuofeng Semiconductor Technology co., LTD 4606 Complementary High Density Trench MOSFET PRODUCT SUMMARY (N-Channel) VDSS ID RDS(on) (m-ohm

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TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector

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4H11G(NPN) 5H11G(PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and swi

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MJ15003 (NPN), MJ15004 (PNP) Complementary Silicon Power Transistors The MJ15003 and MJ15004 are power transistors designed for high power audio, disk

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TIP35C, 36C Complementary Power Transistors Designed for use in general purpose power amplifier and switching applications. Features: • Collector-Emit

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BD243C BD244C Complementary power transistors Features ■ Complementary NPN-PNP devices Applications ■ Power linear and switching Description The devi

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General Description The BPM0405CG uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be

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BP0405SCG 40V Complementary MOSFET Description The BP0405SCG uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The co

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2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation

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PJM10C30PA N and P-Channel Complementary Power MOSFET Product Summary ⚫ N-Channel ⚫ VDS= 30V,ID= 12A ⚫ RDS(on)< 15mΩ @VGS= 10V ⚫ RDS(on)< 20mΩ @VGS=

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Contactors d 3-pole contactors for motor control, 9 to 95 A Utilisation category AC-3 Control circuit : a.c. Dimensions, mounting : pages 1/44 to 1/48

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ATC Complementary Output Hall Effect Latch „ Features - On-chip Hall sensor with two different sensitivity and hysteresis settings for ATS276/277 - 3.

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