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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD777/D Plastic Darlington Complementary Silicon Power Transistors . . . designed for

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Shenzhen Tuofeng Semiconductor Technology co., LTD 4606 Complementary High Density Trench MOSFET PRODUCT SUMMARY (N-Channel) VDSS ID RDS(on) (m-ohm

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4H11G(NPN) 5H11G(PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and swi

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SEMICONDUCTOR TIP31 (NPN) Series TIP32 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 3A/40~100V/40W FEATURES

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BP0405SCG 40V Complementary MOSFET Description The BP0405SCG uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The co

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2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation

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TIP35C, 36C Complementary Power Transistors Designed for use in general purpose power amplifier and switching applications. Features: • Collector-Emit

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TIP41C TIP42C Complementary power transistors Features ■ Complementary PNP-NPN devices ■ New enhanced series ■ High switching speed ■ hFE grouping ■

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TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector

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General Description The BPM0405CG uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be

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SEMICONDUCTOR TIP41 (NPN) Series TIP42 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 6A/40~100V/65W FEATURES

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Contactors d 3-pole contactors for motor control, 9 to 95 A Utilisation category AC-3 Control circuit : a.c. Dimensions, mounting : pages 1/44 to 1/48

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1 of page 8 Specification of NHE520-HF-6/7 File No：NHS-08905- Specification To: Co., Ltd. Name of products High Sensitivity type Hall Element Model

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