LIU Datasheet | Specifications & PDF Download

KP200A (KP) L iu j in g re ct i f ie r c o . , L t d . / Electric speciality/limit value IT VDRM/VRRM IGTMax VGTMax ITSM IHMax dv/dt di/dt VTM size

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0.5 – 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-21186 GAIN (dB) 211 Features • Low Noise Figure: 0.5 dB Typ. @ 2 GHz • High Out

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Photocoupler K5610 • K5611 These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin pac

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MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MHW9188/D The RF Line Gallium Arsenide CATV Amplifier

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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MHW9189A/D Gallium Arsenide CATV Amplifier

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Freescale Semiconductor Technical Data Document Number: MHW10186N Rev. 0, 11/2006 Gallium Arsenide CATV Amplifier Module Features • Specified for 79

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Photocoupler PC-17K1 • PC-17K2 • PC-17K4 These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor

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0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10136 Features • Low Noise Figure: 0.5 dB Typical at 4 GHz • Low Bias: VDS = 2 V, IDS

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0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10100 Features • Low Noise Figure: 0.5 dB Typical at 4 GHz • Low Bias: VDS =2V,IDS␣ =

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2–18 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13100 Features • Low Noise Figure: 1.1 dB Typical at 12 GHz • High Associated Gain: 9.5 d

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2 – 16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13336 Features • Low Noise Figure: 1.4␣ dB Typical at 12␣ GHz • High Associated Gain: 9

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0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10236 Features • Low Noise Figure: 0.8␣ dB Typical at 4␣ GHz • Low Bias: VDS= 2 V, ID

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Surface Mount Gallium Arsenide FET for Oscillators Technical Data ATF-13786 GAIN (dB) 137 Features • Low Cost Surface Mount Plastic Package • High

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0.5 – 10 GHz Low Noise Gallium Arsenide FET Technical Data ATF-25170 Features • Low Noise Figure: 0.8 dB Typical at 4 GHz • High Associated Gain: 14

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0.5 – 10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features • High Output Power: 20.5 dBm Typical P1 dB at 4 GHz • Low Noise

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0.5–10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25735 Features • High Output Power: 19.0␣ Bm Typical P 1dB at 4␣ GHz • High Gain:

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0.5–6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-21170 Features • Low Noise Figure: 0.9 dB Typical at 4 GHz • High Associated Gain: 13.0

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2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 Features • High Output Power: 18.0␣ dBm Typical P 1dB at 12␣ GHz • High Gai

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2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 Features • High Output Power: 18.0␣ dBm Typical P 1dB at 12␣ GHz • High Gai

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