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ATF-21170 Datasheet 0.5-6 Ghz Low Noise Gallium Arsenide Fet

Manufacturer: HP

Overview: 0.5–6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-21170.

Datasheet Details

Part number ATF-21170
Manufacturer HP
File Size 37.85 KB
Description 0.5-6 GHz Low Noise Gallium Arsenide FET
Datasheet ATF-21170-HP.pdf

General Description

The ATF-21170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliability package.

This device is designed for use in low noise or medium power amplifier applications in the 0.5-6 GHz frequency range.

This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 750 microns.

Key Features

  • Low Noise Figure: 0.9 dB Typical at 4 GHz.
  • High Associated Gain: 13.0 dB Typical at 4 GHz.
  • High Output Power: 23.0 dBm Typical P1 dB at 4 GHz.
  • Hermetic Gold-Ceramic Microstrip Package.

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ATF-21170 Distributor