ATF-21170 - 0.5-6 GHz Low Noise Gallium Arsenide FET

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ATF-21170 0.5-6 GHz Low Noise Gallium Arsenide FET by HP - Datasheet Preview — Datasheet preview – ATF-21170

Datasheet Details

Part number	ATF-21170
Manufacturer	HP
File Size	37.85 KB
Description	0.5-6 GHz Low Noise Gallium Arsenide FET
Datasheet	ATF-21170 Datasheet
Additional preview pages of the ATF-21170 datasheet.

Product details

Description

The ATF-21170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliability package.This device is designed for use in low noise or medium power amplifier applications in the 0.5-6 GHz frequency range.This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 750 microns.Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.70 mil Package Electrical Specifi

Features

Low Noise Figure: 0.9 dB Typical at 4 GHz.
High Associated Gain: 13.0 dB Typical at 4 GHz.
High Output Power: 23.0 dBm Typical P1 dB at 4 GHz.
Hermetic Gold-Ceramic Microstrip Package.

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Published: Nov 8, 2017 |