Hewlett-Packard ATF-21170
The ATF-21170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliability package. This device is designed for use in low noise or medium power amplifier applications in the 0.5-6 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 750 microns.| Part No. | ATF-21170 |
|---|---|
| Datasheet | ATF-21170 Download |
| Manufacturer |  Hewlett-Packard |
| Description | 0.5-6 GHz Low Noise Gallium Arsenide FET |
| Buy | Stock & Price |
FEATURES
● Low Noise Figure: 0.9 dB Typical at 4 GHz● High Associated Gain: 13.0 dB Typical at 4 GHz
● High Output Power: 23.0 dBm Typical P1 dB at 4 GHz
● Hermetic Gold-Ceramic Microstrip Package
DESCRIPTION
Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 70 mil PackageELECTRICAL SPECIFICATIONS
, TA = 25°C Symbol Parameters and Test Conditions NFO Optimum Noise Figure: VDS = 3 V, IDS = 20 mA GA Gain @ NFO: VDS = 3 V, IDS = 20 mA P1 dB G1 dB gm IDSS VP Power Output @ 1 dB Gain Compression:
