Datasheet4U Logo Datasheet4U.com

ATF-21170 - 0.5-6 GHz Low Noise Gallium Arsenide FET

General Description

housed in a hermetic, high reliability package.

This device is designed for use in low noise or medium power amplifier applications in the 0.5-6 GHz frequency range.

Key Features

  • Low Noise Figure: 0.9 dB Typical at 4 GHz.
  • High Associated Gain: 13.0 dB Typical at 4 GHz.
  • High Output Power: 23.0 dBm Typical P1 dB at 4 GHz.
  • Hermetic Gold-Ceramic Microstrip Package.

📥 Download Datasheet

Datasheet Details

Part number ATF-21170
Manufacturer HP
File Size 37.85 KB
Description 0.5-6 GHz Low Noise Gallium Arsenide FET
Datasheet download datasheet ATF-21170 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ATF-21186 0.5-6 GHz General Purpose Gallium Arsenide FET Agilent
ATF-10136 0.5-12 GHz Low Noise Gallium Arsenide FET Agilent
ATF-13284 1-16 Ghz Low Noise Gallium Arsenide FET Agilent Technologies
ATF-33143 Low Noise Pseudomorphic HEMT AVAGO
ATF-331M4 Low Noise Pseudomorphic HEMT Agilent

Other Datasheets by HP

Part Number Description
ATF-25170 0.5-10 GHz Low Noise Gallium Arsenide FET
ATF-25570 0.5-10 GHz General Purpose Gallium Arsenide FET
ATF-25735 0.5-10 GHz General Purpose Gallium Arsenide FET
ATF-26150 Gallium Arsenide FET
ATF-26836 2-16 GHz General Purpose Gallium Arsenide FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
0.5–6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-21170 Features • Low Noise Figure: 0.9 dB Typical at 4 GHz • High Associated Gain: 13.0 dB Typical at 4 GHz • High Output Power: 23.0 dBm Typical P1 dB at 4 GHz • Hermetic Gold-Ceramic Microstrip Package Description The ATF-21170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliability package. This device is designed for use in low noise or medium power amplifier applications in the 0.5-6 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 750 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.