ATF-21170 Description
The ATF-21170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliability package. This device is designed for use in low noise or medium power amplifier applications in the 0.5-6 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 750 microns.
ATF-21170 Key Features
- Low Noise Figure: 0.9 dB Typical at 4 GHz
- High Associated Gain: 13.0 dB Typical at 4 GHz
- High Output Power: 23.0 dBm Typical P1 dB at 4 GHz
- Hermetic Gold-Ceramic Microstrip Package