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ATF-25170 Datasheet 0.5-10 Ghz Low Noise Gallium Arsenide Fet

Manufacturer: HP

Overview: 0.5 – 10 GHz Low Noise Gallium Arsenide FET Technical Data ATF-25170.

Datasheet Details

Part number ATF-25170
Manufacturer HP
File Size 35.11 KB
Description 0.5-10 GHz Low Noise Gallium Arsenide FET
Datasheet ATF-25170-HP.pdf

General Description

The ATF-25170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliability package.

Its noise figure makes this device appropriate for use in low noise amplifiers operating in the 0.5-10 GHz frequency range.

This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers.

Key Features

  • Low Noise Figure: 0.8 dB Typical at 4 GHz.
  • High Associated Gain: 14.0 dB Typical at 4 GHz.
  • High Output Power: 21.0 dBm Typical P1 dB at 4 GHz.
  • Hermetic Gold-Ceramic Microstrip Package.

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ATF-25170 Distributor