ATF-25170 - 0.5-10 GHz Low Noise Gallium Arsenide FET

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ATF-25170 0.5-10 GHz Low Noise Gallium Arsenide FET by HP - Datasheet Preview — Datasheet preview – ATF-25170

Datasheet Details

Part number	ATF-25170
Manufacturer	HP
File Size	35.11 KB
Description	0.5-10 GHz Low Noise Gallium Arsenide FET
Datasheet	ATF-25170 Datasheet
Additional preview pages of the ATF-25170 datasheet.

Product details

Description

The ATF-25170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliability package.Its noise figure makes this device appropriate for use in low noise amplifiers operating in the 0.5-10 GHz frequency range.This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers.Total gate periphery is 500 microns.Proven gold based metallization systems and nitride passivation assure a rugged,

Features

Low Noise Figure: 0.8 dB Typical at 4 GHz.
High Associated Gain: 14.0 dB Typical at 4 GHz.
High Output Power: 21.0 dBm Typical P1 dB at 4 GHz.
Hermetic Gold-Ceramic Microstrip Package.

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Published: Nov 8, 2017 |