ATF-25170 Description
The ATF-25170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliability package. Its noise figure makes this device appropriate for use in low noise amplifiers operating in the 0.5-10 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers.
ATF-25170 Key Features
- Low Noise Figure: 0.8 dB Typical at 4 GHz
- High Associated Gain: 14.0 dB Typical at 4 GHz
- High Output Power: 21.0 dBm Typical P1 dB at 4 GHz
- Hermetic Gold-Ceramic Microstrip Package