ATF-25735 Datasheet | HP

0.5- 10 GHz General Purpose Gallium Arsenide FET Technical Data Features - High Output Power: 19.0␣ Bm Typical P 1dB at 4␣ GHz - High Gain: 12.5␣ dB Typical G 1 dB at 4 GHz - Low Noise Figure: 1.2 dB Typical at 4 GHz - Cost Effective Ceramic Microstrip Package Description The ATF-25735 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in general purpose amplifier and oscillator applications in the 0.5-10 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500...