• Part: ATF-26836
  • Description: 2-16 GHz General Purpose Gallium Arsenide FET
  • Manufacturer: HP
  • Size: 41.79 KB
Download ATF-26836 Datasheet PDF
HP
ATF-26836
ATF-26836 is 2-16 GHz General Purpose Gallium Arsenide FET manufactured by HP.
- 16 GHz General Purpose Gallium Arsenide FET Technical Data Features - High Output Power: 18.0␣ dBm Typical P 1dB at 12␣ GHz - High Gain: 9.0 dB Typical GSS at 12␣ GHz - Cost Effective Ceramic Microstrip Package - Tape-and-Reel Packaging Option Available[1] Description The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in oscillator applications and general purpose amplifier applications in the 2-16␣ GHz frequency range. 36 micro-X Package This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns. Proven...