ATF-26836 Description
The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in oscillator applications and general purpose amplifier applications in the 2-16␣ GHz frequency range. 36 micro-X Package This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns.
ATF-26836 Key Features
- High Output Power: 18.0␣ dBm Typical P 1dB at 12␣ GHz
- High Gain: 9.0 dB Typical GSS at 12␣ GHz
- Cost Effective Ceramic Microstrip Package
- Tape-and-Reel Packaging Option Available[1]