Datasheet4U Logo Datasheet4U.com

ATF-26836 - 2-16 GHz General Purpose Gallium Arsenide FET

General Description

The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package.

This device is designed for use in oscillator applications and general purpose amplifier applications in the 2-16␣ GHz frequency range.

Key Features

  • High Output Power: 18.0␣ dBm Typical P 1dB at 12␣ GHz.
  • High Gain: 9.0 dB Typical GSS at 12␣ GHz.
  • Cost Effective Ceramic Microstrip Package.
  • Tape-and-Reel Packaging Option Available[1].

📥 Download Datasheet

Datasheet Details

Part number ATF-26836
Manufacturer HP
File Size 41.79 KB
Description 2-16 GHz General Purpose Gallium Arsenide FET
Datasheet download datasheet ATF-26836 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 Features • High Output Power: 18.0␣ dBm Typical P 1dB at 12␣ GHz • High Gain: 9.0 dB Typical GSS at 12␣ GHz • Cost Effective Ceramic Microstrip Package • Tape-and-Reel Packaging Option Available[1] Description The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in oscillator applications and general purpose amplifier applications in the 2-16␣ GHz frequency range. 36 micro-X Package This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.