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ATF-26884 - 2-16 GHz General Purpose Gallium Arsenide FET

General Description

housed in a cost effective microstrip package.

This device is designed for use in oscillator applications and general purpose amplifier applications in the 2-16␣ GHz frequency range.

Key Features

  • High Output Power: 18.0␣ dBm Typical P 1dB at 12␣ GHz.
  • High Gain: 9.0 dB Typical GSS at 12␣ GHz.
  • Low Cost Plastic Package.
  • Tape-and-Reel Packaging Option Available[1].

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Datasheet Details

Part number ATF-26884
Manufacturer HP
File Size 39.50 KB
Description 2-16 GHz General Purpose Gallium Arsenide FET
Datasheet download datasheet ATF-26884 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 Features • High Output Power: 18.0␣ dBm Typical P 1dB at 12␣ GHz • High Gain: 9.0 dB Typical GSS at 12␣ GHz • Low Cost Plastic Package • Tape-and-Reel Packaging Option Available[1] Description The ATF-26884 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in oscillator applications and general purpose amplifier applications in the 2-16␣ GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.