LM77 Datasheet | Specifications & PDF Download

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ELM7785-16F C-band Internally Matched FET FEATURES High Output Power : P1dB=42.5dBm(typ.) High Gain : G1dB=8.0dB(typ.) High P.A.E. : hadd=37%(typ.) Br

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ELM7785-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm (Typ.) High Gain: G1dB=10.0dB (Typ.) High PAE: ηadd=34% (Typ.) Broa

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Product Folder Order Now Technical Documents Tools & Software Support & Community LM7705 SNVS420D – NOVEMBER 2008 – REVISED MAY 2018 LM7705 Low-N

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LM759 LM77000 Power Operational Amplifiers November 1994 LM759 LM77000 Power Operational Amplifiers General Description The LM759 and LM77000 are hi

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LM77 9-Bit + Sign Digital Temperature Sensor and Thermal Window Comparator with Two-Wire Interface June 1999 LM77 9-Bit + Sign Digital Temperature S

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LM77 www.ti.com SNIS103F – JUNE 1999 – REVISED MARCH 2013 LM77 9-Bit + Sign Digital Temperature Sensor and Thermal Window Comparator with Two-Wire

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ELM7785-7PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=39.0dBm (Typ.) High Gain: G1dB=9.5dB (Typ.) High PAE: ηadd=33% (Typ.) Broad

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FLM7785-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm (Typ.) High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd

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FLM7785-45F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=46.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=32.5%(Typ.) ・Br

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FLM7785-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd

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ELM7785-10F C-band Internally Matched FET FEATURES ・High Output Power ： P1dB=40.5dBm(typ.) ・High Gain ： G1dB=8.5dB(typ.) ・High P.A.E. ： ηadd=37%(typ.)

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FLM7785-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 8.5dB (Typ.) High PAE: ηad

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ELM7785-35F C-Band Internally Matched FET FEATURES •High Output Power: P1dB=45.5dBm(Typ.) •High Gain: G1dB=8.0dB(Typ.) •High PAE: ηadd=35%(Typ.) •Broa

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ELM7785-60F FEATURES •High Output Power: P1dB=48.0dBm(Typ.) •High Gain: G1dB=8.0dB(Typ.) •High PAE: ηadd=37%(Typ.) •Broad Band: 7.7 to 8.5GHz •Impedan

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FLM7785-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm (Typ.) High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd

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FLM7785-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 7.0dB (Typ.) High PAE: ηad

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FLM7785-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 7.0dB (Typ.) High PAE: ηad

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