LN2302 Datasheet | Specifications & PDF Download

LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET FEATURES ● RDS(ON)≦85mΩ@VGS=4.5V ● RDS(ON)≦115mΩ@VGS=2.5V ● RDS(ON)≦135mΩ@VGS=1.8V

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N-Channel Enhancement Mode Field Effect Transistor ■ General Description VDSS 20V Product Summary ID 3.6A RDS(ON)(mΩ)TYP 65 @ VGS= 4.5V 90 @ VGS= 2

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LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET ●APPLICATIONS 1)High Density Cell Design For Ultra Low On-Resistance Improved Shoot

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LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET FEATURES ● RDS(ON)≦85mΩ@VGS=4.5V ● RDS(ON)≦115mΩ@VGS=2.5V ● RDS(ON)≦135mΩ@VGS=1.8V

(3 views)

LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET ●APPLICATIONS 1)High Density Cell Design For Ultra Low On-Resistance Improved Shoot

(2 views)