LN2306 Datasheet | Specifications & PDF Download

LN2306 N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor.

N-Channel Enhancement Mode Field Effect Transistor ■ General Description VDSS 20V Product Summary ID 0.65A 0.55A RDS(ON)(mΩ)TYP 130 @ VGS= 4.5V 160

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LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET ●APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For Ul

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LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET ●APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For Ul

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