LN2308 Datasheet | Specifications & PDF Download

N-Channel Enhancement Mode Field Effect Transistor LN2308 ■ General Description VDSS 20V Product Summary ID 0.65A 0.55A RDS(ON)(mΩ)TYP 260 @ VGS=

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LESHAN RADIO COMPANY, LTD. 60V N-Channel Enhancement-Mode MOSFET FEATURES ● RDS(ON) ≦100mΩ@VGS=10V ● RDS(ON) ≦130mΩ@VGS=4.5V ● RDS(ON) ≦200mΩ@VGS=3.

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LESHAN RADIO COMPANY, LTD. 60V N-Channel Enhancement-Mode MOSFET FEATURES ● RDS(ON) ≦100mΩ@VGS=10V ● RDS(ON) ≦130mΩ@VGS=4.5V ● RDS(ON) ≦200mΩ@VGS=3.

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N-Channel Enhancement Mode Field Effect Transistor LN2308B ■ General Description VDSS 20V Product Summary ID 0.65A 0.55A RDS(ON)(mΩ)TYP 260 @ VGS=

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N-Channel Enhancement Mode Field Effect Transistor LN2308C ■ General Description VDSS 20V Product Summary ID 0.65A 0.55A RDS(ON)(mΩ)TYP 260 @ VGS=

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