M-8880 Datasheet | Specifications & PDF Download

FDS8880 N-Channel PowerTrench® MOSFET April 2005 FDS8880 N-Channel PowerTrench® MOSFET 30V, 11.6A, 10mΩ Features r DS(ON) = 10mΩ, VGS = 10V, ID = 11

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® RT8880C Dual-Output PWM Controller with 3 Integrated Drivers for AMD SVI2 Mobile CPU Power Supply General Description The RT8880C is a 3 + 2 phase

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FDS8880 N-Channel PowerTrench® MOSFET FDS8880 N-Channel PowerTrench® MOSFET 30V, 11.6A, 10mΩ Features „ rDS(on) = 10mΩ, VGS = 10V, ID = 11.6A „ rDS(

Rating: 1 ★ (6 votes)

FDP8880 / FDB8880 0 May 2008 FDP8880 / FDB8880 N-Channel PowerTrench® MOSFET tmM 30V, 54A, 11.6mΩ Features rDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 40A

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FDU8880 May 2008 FDU8880 N-Channel PowerTrench® MOSFET 30V, 58A, 10mΩ General Description This N-Channel MOSFET has been designed specifically to im

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FDMS8880 N-Channel PowerTrench® MOSFET FDMS8880 N-Channel PowerTrench® MOSFET 30 V, 21 A, 8.5 m: Features General Description October 2014 „ Ma

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S-8880A Series www.ablicinc.com © ABLIC Inc., 2017 ENERGY HARVESTING POWERED BY ULTRA-LOW POWER AND ULTRA-LOW VOLTAGE OPERATION BOOST CHARGE PUMP FO

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Micrel 5V 155Mbps LASER DIODE DRIVER WITH OUTPUT ENABLE SY88802 SY88802 FEATURES s s s s s s Up to 155Mbps operation Modulation current to 25mA PE

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www.DataSheet4U.com Features General • High-performance, Low-power secureAVR® Core Enhanced RISC Architecture – 135 Powerful Instructions (Most Execu

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Freescale N-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Application

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Freescale N-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Application

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FEATURES  Double Side Cooling  High Surge Capability DRD8880H22 Rectifier Diode DS6006 – 1 March 2011 (LN28193) KEY PARAMETERS VRRM IF(AV) IFSM

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263 packaging ·Drain Source Voltage- : VDSS ≥ 30V ·Static drain-source on-resistance: RDS(on) ≤ 11

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 30V ·Static drain-source on-resistance: RDS(on) ≤ 11

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MOSFET – N-Channel, POWERTRENCH) 30 V, 58 A, 9 mW FDD8880, FDD8880-G General Description This N−Channel MOSFET has been designed specifically to impr

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HB288800A5/HB288640A5 HB288448A5/HB288320A5 HB288256A5/HB288192A5 HB288160A5/HB288128A5 HB288096A5/HB288064A5 HB288032A5 FLASH ATA Card 800 MByte/640

Rating: 1 ★ (3 votes)

HB2881000A6/HB288800A6 HB288640A6/HB288448A6 HB288320A6/HB288256A6 HB288192A6/HB288160A6 HB288128A6/HB288096A6 HB288064A6/HB288032A6 FLASH ATA Card 1

Rating: 1 ★ (3 votes)

10Base-T Isolation Transformers
For Adaptor Cards,Maus,Hubs,and Motherboard applications
Designed to meet or exceed IEEE802.3. 10Base-T specific

Rating: 1 ★ (3 votes)