FDS8880 N-Channel MOSFET

ON Semiconductor

Description

FDS8880 N-Channel PowerTrench® MOSFET FDS8880 N-Channel PowerTrench® MOSFET 30V, 11.6A, 10mΩ .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Datasheet Specifications

Part number: FDS8880
Manufacturer: ON Semiconductor ↗
File Size: 564.16 KB
Datasheet: FDS8880-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* rDS(on) = 10mΩ, VGS = 10V, ID = 11.6A
* rDS(on) = 12mΩ, VGS = 4.5V, ID = 10.7A
* High performance trench technology for extremely low rDS(on)
* Low gate charge
* High power and current handling capability

Applications

* DC/DC converters Branding Dash 5 1 2 3 4 SO-8 5 4 6 3 7 2 8 1 ©2007 Semiconductor Components Industries, LLC. 1 October-2017, Rev. 2 Publication Order Number: FDS8880/D FDS8880 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS

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FDS8880 N-Channel MOSFET ON Semiconductor

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