FDS8433A Datasheet - ON Semiconductor

P-Channel MOSFET

FDS8433A Features

* -5 A, -20 V. RDS(on) = 0.047 Ω @ VGS = -4.5 V RDS(on) = 0.070 Ω @ VGS = -2.5 V

* Fast switching speed.

* High density cell design for extremely low RDS(on).

* High power and current handling capability. D D 5 D D 6 7 G SO-8 SS S 8 Absolute Maximum Rating

FDS8433A General Description

This P-Channel enhancement mode power field effect transistors is produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize on-state resistance and provide superior switching performance. Applications *.

FDS8433A Datasheet (171.51 KB)