Datasheet4U Logo Datasheet4U.com

FDS86240 - MOSFET

Description

Shielded Gate MOSFET Technology Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A High Performance Trench Technology for Extremely Low rDS(on) High Power and Current Handling Capability in a Widely Used Sur

Features

  • General.

📥 Download Datasheet

Datasheet preview – FDS86240

Datasheet Details

Part number FDS86240
Manufacturer Fairchild Semiconductor
File Size 241.01 KB
Description MOSFET
Datasheet download datasheet FDS86240 Datasheet
Additional preview pages of the FDS86240 datasheet.

📁 Similar Datasheet

  • FDS86240 - N-Channel MOSFET (ON Semiconductor)
  • FDS86242 - N-Channel Power MOSFET (ON Semiconductor)
  • FDS86141 - N-Channel MOSFET (ON Semiconductor)
  • FDS8672S - N-Channel MOSFET (ON Semiconductor)
  • FDS8433A - P-Channel MOSFET (ON Semiconductor)
  • FDS8447 - N-Channel 40V MOSFET (VBsemi)
  • FDS8449 - N-Channel MOSFET (ON Semiconductor)
  • FDS8449-F085 - N-Channel MOSFET (ON Semiconductor)
  • FDS8817NZ - N-Channel MOSFET (ON Semiconductor)
  • FDS8840NZ - N-Channel MOSFET (ON Semiconductor)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDS86240 N-Channel Shielded Gate PowerTrench® MOSFET www.onsemi.com FDS86240 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 7.5 A, 19.8 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A „ Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A „ High Performance Trench Technology for Extremely Low rDS(on) „ High Power and Current Handling Capability in a Widely Used Surface Mount Package „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using ON Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
Published: |