FDS8638 Datasheet | Fairchild Semiconductor

FDS8638 N-Channel Power Trench® MOSFET N-Channel Power Trench® MOSFET 40 V, 18 A, 4.3 mΩ Features General Description March 2009 - Max r DS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A - Max r DS(on) = 5.4 mΩ at VGS = 4.5 V, ID = 16 A - High performance trench technology for extremely low r DS(on) - 100% UIL Tested - Ro HS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications - Synchronous Rectifier - Load Switch SO-8 Pin 1 D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TA = 25...