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FDS8638 - N-Channel MOSFET

General Description

March 2009 Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 5.4 mΩ at VGS = 4.5 V, ID = 16 A High performance trench technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild S

Key Features

  • General.

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FDS8638 N-Channel PowerTrench® MOSFET FDS8638 N-Channel PowerTrench® MOSFET 40 V, 18 A, 4.3 mΩ Features General Description March 2009 „ Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A „ Max rDS(on) = 5.4 mΩ at VGS = 4.5 V, ID = 16 A „ High performance trench technology for extremely low rDS(on) „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.