Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body
diod
Features
- Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18 A.
- Max rDS(on) = 5.4 mΩ at VGS = 8 V, ID = 16.5 A.
- High performance trench technologh for extremely low rDS(on).
- High power and current handing capability in a widely used
surface mount package.
- 100% UIL Tested.
- RoHS Compliant
May 2012
General.
FDS86540 Datasheet
