FDS86540 Datasheet | Fairchild Semiconductor

FDS86540 N-Channel Power Trench® MOSFET N-Channel Power Trench® MOSFET 60 V, 18 A, 4.5 mΩ Features - Max r DS(on) = 4.5 mΩ at VGS = 10 V, ID = 18 A - Max r DS(on) = 5.4 mΩ at VGS = 8 V, ID = 16.5 A - High performance trench technologh for extremely low r DS(on) - High power and current handing capability in a widely used surface mount package - 100% UIL Tested - Ro HS pliant May 2012 General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low r DS(on), fast switching speed and body diode reverse recovery performance. Applications - Primary Switch in isolated DC-DC - Synchronous Rectifier - Load Switch SO-8 Pin 1 D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche...