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FDS86540 Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDS86540 N-Channel PowerTrench® MOSFET FDS86540 N-Channel PowerTrench® MOSFET 60 V, 18 A, 4.

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Applications „ Primary Switch in isolated DC-DC „ Synchronous Rectifier „ Load Switch D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 3) (Note 1) (Note 1a) Ratings 60 ±20 18 120 194 5.0 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) (Note 1a) 25 50 °C/W Device Marking FDS86540 Device FDS86540 Package SO-8 Reel Size 13’’ Tape Width 12 mm Quantity 2500 units ©2012 Fairchild Semiconductor Corporation FDS86540 Rev.

C 1 .fairchildsemi.

Key Features

  • Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18 A.
  • Max rDS(on) = 5.4 mΩ at VGS = 8 V, ID = 16.5 A.
  • High performance trench technologh for extremely low rDS(on).
  • High power and current handing capability in a widely used surface mount package.
  • 100% UIL Tested.
  • RoHS Compliant May 2012 General.

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FDS86540 Distributor