FDS8840NZ Datasheet - ON Semiconductor

N-Channel MOSFET

* Max rDS(on) = 4.5 mW at VGS = 10 V, ID = 18.6 A

* Max rDS(on) = 6.0 mW at VGS = 4.5 V, ID = 14.9 A

* HBM ESD Protection Level of 6 kV Typical (Note 3)

* High Performance Trench Technology for Extremely Low rDS(on) and Fast Switching

* High Power and Current

FDS8840NZ

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N-channel mosfet.

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FDS8840NZ N-Channel MOSFET ON Semiconductor

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