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FDS8874 N-Channel MOSFET

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Description

FDS8874 N-Channel PowerTrench® MOSFET April 2007 FDS8874 tm N-Channel PowerTrench® MOSFET 30V, 16A, 5.5mΩ .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Datasheet Specifications

Part number
FDS8874
Manufacturer
Fairchild Semiconductor
File Size
625.49 KB
Datasheet
FDS8874_FairchildSemiconductor.pdf
Description
N-Channel MOSFET

Features

* rDS(on) = 5.5mΩ, VGS = 10V, ID = 16A
* rDS(on) = 7.0mΩ, VGS = 4.5V, ID = 15A
* High performance trench technology for extremely low rDS(on)
* Low gate charge
* High power and current handling capability
* 100% Rg tested
* RoHS Compliant Gene

Applications

* DC/DC converters D D 5 D D 6 SO-8 G 7 S Pin 1 S S 8 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TA = 25oC, VGS = 10V, RθJA = 50oC/W) Continuous (TA

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