Datasheet Summary
FDS8878 N-Channel PowerTrench® MOSFET
June 2005
FDS8878 N-Channel PowerTrench® MOSFET
30V, 10.2A, 14mΩ Features
- rDS(ON) = 14mΩ, VGS = 10V, ID = 10.2A
- rDS(ON) = 17mΩ, VGS = 4.5V, ID = 9.3A
- High performance trench technology for extremely low rDS(ON)
- Low gate charge
- High power and current handling capability
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Applications
- DC/DC converters
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