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FDS8878 - N-Channel MOSFET

General Description

This N

improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on) and fast switching speed.

Key Features

  • rDS(on) = 14 mW, VGS = 10 V, ID = 10.2 A.
  • rDS(on) = 17 mW, VGS = 4.5 V, ID = 9.3 A.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • Low Gate Charge.
  • High Power and Current Handling Capability.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number FDS8878
Manufacturer onsemi
File Size 374.85 KB
Description N-Channel MOSFET
Datasheet download datasheet FDS8878 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 30 V, 10.2 A, 14 mW FDS8878, FDS8878-F123 General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Features • rDS(on) = 14 mW, VGS = 10 V, ID = 10.2 A • rDS(on) = 17 mW, VGS = 4.5 V, ID = 9.