FDS8874 Datasheet | Fairchild Semiconductor

Features - r DS(on) = 5.5mΩ, VGS = 10V, ID = 16A - r DS(on) = 7.0mΩ, VGS = 4.5V, ID = 15A - High performance trench technology for extremely low r DS(on) - Low gate charge - High power and current handling capability - 100% Rg tested - Ro HS pliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed. Applications - DC/DC converters 5 D SO-8 Pin 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TA = 25o C, VGS = 10V, RθJA = 50o C/W) Continuous (TA = 25o C, VGS = 4.5V, RθJA = 50o C/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25o C Operating and Storage Temperature Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction to Case (Note 2) Thermal Resistance, Junction to Ambient (Note 2a) Thermal Resistance, Junction to Ambient (Note 2b) Package Marking and Ordering Information Device Marking FDS8874 Device FDS8874 Package SO-8 Reel Size 330mm 4 3 2 1 Ratings 30 ±20 16 15 115 265 2.5 20 -55 to...