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FDS8874 Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDS8874 N-Channel PowerTrench® MOSFET April 2007 FDS8874 tm N-Channel PowerTrench® MOSFET 30V, 16A, 5.

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on) and fast switching speed.

Applications „ DC/DC converters D D 5 D D 6 SO-8 G 7 S Pin 1 S S 8 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TA = 25oC, VGS = 10V, RθJA = 50oC/W) Continuous (TA = 25oC, VGS = 4.5V, RθJA = 50oC/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction to Case (Note 2) Thermal Resistance, Junction to Ambient (Note 2a) Thermal Resistance, Junction to Ambient (Note 2b) Package Marking and Ordering Information Device Marking FDS8874 Device FDS8874 Package SO-8 Reel Size 330mm 4 3 2 1 Ratings 30 ±20 16 15 115 265 2.5 20 -55 to 150 25 50 125 Units V V A A A mJ W mW/oC oC oC/W oC/W oC/W Tape Width 12mm Quantity 2500 units ©2007 Fairchild Semiconductor Corporation 1 FDS8874 Rev.

Key Features

  • rDS(on) = 5.5mΩ, VGS = 10V, ID = 16A.
  • rDS(on) = 7.0mΩ, VGS = 4.5V, ID = 15A.
  • High performance trench technology for extremely low rDS(on).
  • Low gate charge.
  • High power and current handling capability.
  • 100% Rg tested.
  • RoHS Compliant General.

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